METHOD FOR ACHIEVING ULTRA-HIGH SELECTIVITY WHILE ETCHING SILICON NITRIDE

Apparatuses for processing substrates are provided herein. Apparatuses include a plasma etch chamber having a showerhead and pedestal for holding a substrate having silicon nitride, at least one outlet for coupling to a vacuum, a solid non-functional silicon source, and a plasma generator. A solid s...

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Hauptverfasser:	HELEN H. ZHU, PILYEON PARK, JOON HONG PARK, FAISAL YAQOOB, IVAN L. BERRY III, LINDA MARQUEZ, IVELIN A. ANGELOV
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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