METHOD FOR PRODUCING ACTIVE STRUCTURE OF NON-VOLATILE RESISTIVE MEMORY ELEMENT

FIELD: storage devices.SUBSTANCE: invention relates to the technology of information accumulation, to computer technology, in particular to the elements of resistive memory, to the memory elements of electrically reprogrammable permanent storage devices that store information when the power is turne...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kamaev Gennadij Nikolaevich, Gismatullin Andrej Andreevich, Gritsenko Vladimir Alekseevich, Volodin Vladimir Alekseevich
Format: Patent
Sprache:eng ; rus
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