METHOD OF PROFILING COMPOSITION AT EPITAXIAL FORMATION OF SEMICONDUCTOR STRUCTURE BASED ON SOLID SOLUTIONS

FIELD: technological processes.SUBSTANCE: invention relates to profiling of composition of solid solutions of heteroepitaxial structures at their growth. Method of forming a structure of type ABbased on tellurides of the elements of the second group of the Periodic Table involves measuring ellipsome...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Shvets Vasilij Aleksandrovich, Ikusov Danil Gennadevich, Uzhakov Ivan Nikolaevich, Dvoretskij Sergej Alekseevich, Mikhajlov Nikolaj Nikolaevich
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MANUFACTURE OR TREATMENT THEREOF MEASURING NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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