METHOD OF PRODUCING CD3AS2 CRYSTALS
FIELD: chemistry.SUBSTANCE: invention relates to cultivation of crystals of triadmitia diarsenid. CdAscrystals are obtained by crystallisation of melt drops of stoichiometric composition freely falling in an argon atmosphere under pressure of 5±0.5 MPa, wherein the temperature gradient on the drop f...
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| creator | Timonina Anna Vladimirovna Devyatov Eduard Valentinovich Shvetsov Oleg Olegovich Kolesnikov Nikolaj Nikolaevich Esin Varnava Denisovich |
| description | FIELD: chemistry.SUBSTANCE: invention relates to cultivation of crystals of triadmitia diarsenid. CdAscrystals are obtained by crystallisation of melt drops of stoichiometric composition freely falling in an argon atmosphere under pressure of 5±0.5 MPa, wherein the temperature gradient on the drop falling path is 44-52 deg/cm.EFFECT: method enables to obtain monocrystals having superconductivity on samples oriented in (112).1 cl, 1 dwg, 7 ex
Изобретение относится к области выращивания кристаллов диарсенида трикадмия. Кристаллы CdAsполучают кристаллизацией капель расплава стехиометрического состава, свободно падающих в атмосфере аргона, находящегося под давлением 5±0,5 МПа, причем градиент температуры на пути падения капель составляет 44-52 град./см. Способ позволяет получать монокристаллы, обладающие поверхностной сверхпроводимостью на образцах, ориентированных по (112). 1 ил., 7 пр. |
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Изобретение относится к области выращивания кристаллов диарсенида трикадмия. Кристаллы CdAsполучают кристаллизацией капель расплава стехиометрического состава, свободно падающих в атмосфере аргона, находящегося под давлением 5±0,5 МПа, причем градиент температуры на пути падения капель составляет 44-52 град./см. Способ позволяет получать монокристаллы, обладающие поверхностной сверхпроводимостью на образцах, ориентированных по (112). 1 ил., 7 пр.</description><language>eng ; rus</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190716&DB=EPODOC&CC=RU&NR=2694768C1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190716&DB=EPODOC&CC=RU&NR=2694768C1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Timonina Anna Vladimirovna</creatorcontrib><creatorcontrib>Devyatov Eduard Valentinovich</creatorcontrib><creatorcontrib>Shvetsov Oleg Olegovich</creatorcontrib><creatorcontrib>Kolesnikov Nikolaj Nikolaevich</creatorcontrib><creatorcontrib>Esin Varnava Denisovich</creatorcontrib><title>METHOD OF PRODUCING CD3AS2 CRYSTALS</title><description>FIELD: chemistry.SUBSTANCE: invention relates to cultivation of crystals of triadmitia diarsenid. CdAscrystals are obtained by crystallisation of melt drops of stoichiometric composition freely falling in an argon atmosphere under pressure of 5±0.5 MPa, wherein the temperature gradient on the drop falling path is 44-52 deg/cm.EFFECT: method enables to obtain monocrystals having superconductivity on samples oriented in (112).1 cl, 1 dwg, 7 ex
Изобретение относится к области выращивания кристаллов диарсенида трикадмия. Кристаллы CdAsполучают кристаллизацией капель расплава стехиометрического состава, свободно падающих в атмосфере аргона, находящегося под давлением 5±0,5 МПа, причем градиент температуры на пути падения капель составляет 44-52 град./см. Способ позволяет получать монокристаллы, обладающие поверхностной сверхпроводимостью на образцах, ориентированных по (112). 1 ил., 7 пр.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2dQ3x8HdR8HdTCAjydwl19vRzV3B2MXYMNlJwDooMDnH0CeZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFBoUZmlibmZhbOhsZEKAEACToiZA</recordid><startdate>20190716</startdate><enddate>20190716</enddate><creator>Timonina Anna Vladimirovna</creator><creator>Devyatov Eduard Valentinovich</creator><creator>Shvetsov Oleg Olegovich</creator><creator>Kolesnikov Nikolaj Nikolaevich</creator><creator>Esin Varnava Denisovich</creator><scope>EVB</scope></search><sort><creationdate>20190716</creationdate><title>METHOD OF PRODUCING CD3AS2 CRYSTALS</title><author>Timonina Anna Vladimirovna ; Devyatov Eduard Valentinovich ; Shvetsov Oleg Olegovich ; Kolesnikov Nikolaj Nikolaevich ; Esin Varnava Denisovich</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_RU2694768C13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; rus</language><creationdate>2019</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>Timonina Anna Vladimirovna</creatorcontrib><creatorcontrib>Devyatov Eduard Valentinovich</creatorcontrib><creatorcontrib>Shvetsov Oleg Olegovich</creatorcontrib><creatorcontrib>Kolesnikov Nikolaj Nikolaevich</creatorcontrib><creatorcontrib>Esin Varnava Denisovich</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Timonina Anna Vladimirovna</au><au>Devyatov Eduard Valentinovich</au><au>Shvetsov Oleg Olegovich</au><au>Kolesnikov Nikolaj Nikolaevich</au><au>Esin Varnava Denisovich</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF PRODUCING CD3AS2 CRYSTALS</title><date>2019-07-16</date><risdate>2019</risdate><abstract>FIELD: chemistry.SUBSTANCE: invention relates to cultivation of crystals of triadmitia diarsenid. CdAscrystals are obtained by crystallisation of melt drops of stoichiometric composition freely falling in an argon atmosphere under pressure of 5±0.5 MPa, wherein the temperature gradient on the drop falling path is 44-52 deg/cm.EFFECT: method enables to obtain monocrystals having superconductivity on samples oriented in (112).1 cl, 1 dwg, 7 ex
Изобретение относится к области выращивания кристаллов диарсенида трикадмия. Кристаллы CdAsполучают кристаллизацией капель расплава стехиометрического состава, свободно падающих в атмосфере аргона, находящегося под давлением 5±0,5 МПа, причем градиент температуры на пути падения капель составляет 44-52 град./см. Способ позволяет получать монокристаллы, обладающие поверхностной сверхпроводимостью на образцах, ориентированных по (112). 1 ил., 7 пр.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD OF PRODUCING CD3AS2 CRYSTALS |
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