STRUCTURE OF PHOTOCONVERTER BASED ON CRYSTALLINE SILICON AND ITS PRODUCTION LINE

FIELD: physics.SUBSTANCE: structure of the photoconverter based on crystalline silicon includes: a textured polycrystalline or monocrystalline silicon plate; a passivation layer in the form of amorphous hydrogenated silicon deposited on each side of the silicon plate; p-layer; n-layer; contact current-collecting layers in the form of transparent conductive oxides; a rear current-collecting layer in the form of a metallic opaque conductive layer, wherein metal oxides of p-type and n-type are respectively used as the p-layer and n-layer, wherein n-type and p-type layers, passivation and current-collecting layers are applied by magnetron sputtering method. Zinc oxide (ZnO) or SnO, FeO, TiO, VO, MnO, CdO, or other n-type metal oxides are used as n-type metal oxide. MoO, or CoO, CuO, NiO, CrO, or other p-type metal oxides are used as p-type metal oxide. A production line for photoconverter based on crystalline silicon, including sequential operations, such as: cleaning and texturing crystalline silicon plates; depositing a passivation layer of amorphous hydrogenated silicon on each side of the silicon plate; application of the p-layer of the photoconverter; application of the n-layer of the photoconverter; application of contact current-collecting layers of the photoconverter; application of the rear current-collecting layer; final assembly, wherein sequential magnetron sputtering of the passivation layer, p-layer in the form of the p-type metal oxide, n-layer in the form of the n-type metal oxide, and current-collecting layers is performed by magnetron sputtering. In this case, a magnetron sputtering of the silicon target in an atmosphere of silane and argon with the addition of hydrogen can be carried out.EFFECT: invention allows to increase productivity, reduce the dimensions of the production line, eliminate the need for overturning silicon plates in the production process.5 cl, 1 dwg Изобретение относится к области полупроводниковых приборов, а именно к структуре фотопреобразователей на основе монокристаллического или поликристаллического кремния и к линии по производству фотопреобразователей. Структура фотопреобразователя на основе кристаллического кремния включает: текстурированную поликристаллическую или монокристаллическую пластину кремния; пассивирующий слой в виде аморфного гидрогенизированного кремния, нанесенный на каждую сторону пластины кремния; р-слой; n-слой; контактные токосъемные слои в виде прозрачных проводящих оксидов; тыльный токосъемный