TUNNEL UNALLOYED MULTI-SHEAR FIELD NANOTRANSISTOR WITH CONTACTS OF SCHOTTKY

FIELD: electricity.SUBSTANCE: design of a tunnel unalloyed multi-gate field nanotransistor with Schottky contacts is proposed, characterized in that two or more gate control electrodes are located in series on the surface of the gate dielectric layer in the section above the nanotransistor channel b...

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Hauptverfasser:	Vyurkov Vladimir Vladimirovich, Svintsov Dmitrij Aleksandrovich, Lukichev Vladimir Fedorovich, Rudenko Konstantin Vasilevich, Semin Yurij Fedorovich
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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