MONOCRYSTALLINE MATERIAL FOR DISC LASER
FIELD: optics.SUBSTANCE: invention relates to laser engineering and concerns monocrystalline material for disc lasers. Monocrystalline material is based on a yttrium aluminium garnet, activated by ytterbium ions. Initial components are taken in accordance with the structural formula Yb:YAlO, where-...
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| creator | TKACHEV DMITRIJ SERGEEVICH YAKOVENKO NIKOLAJ ANDREEVICH GALUTSKIJ VALERIJ VIKTOROVICH STROGANOVA ELENA VALEREVNA |
| description | FIELD: optics.SUBSTANCE: invention relates to laser engineering and concerns monocrystalline material for disc lasers. Monocrystalline material is based on a yttrium aluminium garnet, activated by ytterbium ions. Initial components are taken in accordance with the structural formula Yb:YAlO, where- function of concentration profile change, z - axis of direction of forming the crystal concentration profile, 0 |
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Изобретение относится к области лазерной техники и касается монокристаллического материала для дисковых лазеров. Монокристаллический материал выполнен на основе алюмоиттриевого граната, активированного ионами иттербия. При этом исходные компоненты взяты в соответствии со структурной формулой Yb:YAlO,где- функция изменения концентрационного профиля,z - ось направления формирования концентрационного профиля кристалла, 0<z<1,2. Технический результат заключается в обеспечении сглаженного распределения теплового поля, отсутствии тепловой линзы внутри активного элемента и увеличении предельного размера генерируемого объема в активном элементе. 3 ил., 1 табл.</description><language>eng ; rus</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160720&DB=EPODOC&CC=RU&NR=2591257C1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160720&DB=EPODOC&CC=RU&NR=2591257C1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TKACHEV DMITRIJ SERGEEVICH</creatorcontrib><creatorcontrib>YAKOVENKO NIKOLAJ ANDREEVICH</creatorcontrib><creatorcontrib>GALUTSKIJ VALERIJ VIKTOROVICH</creatorcontrib><creatorcontrib>STROGANOVA ELENA VALEREVNA</creatorcontrib><title>MONOCRYSTALLINE MATERIAL FOR DISC LASER</title><description>FIELD: optics.SUBSTANCE: invention relates to laser engineering and concerns monocrystalline material for disc lasers. Monocrystalline material is based on a yttrium aluminium garnet, activated by ytterbium ions. Initial components are taken in accordance with the structural formula Yb:YAlO, where- function of concentration profile change, z - axis of direction of forming the crystal concentration profile, 0<z<1.2.EFFECT: providing smoothed distribution of heat field, the absence of thermal lens inside the active element and increase of maximum size of the generated volume in the active element.1 cl, 3 dwg, 1 tbl
Изобретение относится к области лазерной техники и касается монокристаллического материала для дисковых лазеров. Монокристаллический материал выполнен на основе алюмоиттриевого граната, активированного ионами иттербия. При этом исходные компоненты взяты в соответствии со структурной формулой Yb:YAlO,где- функция изменения концентрационного профиля,z - ось направления формирования концентрационного профиля кристалла, 0<z<1,2. Технический результат заключается в обеспечении сглаженного распределения теплового поля, отсутствии тепловой линзы внутри активного элемента и увеличении предельного размера генерируемого объема в активном элементе. 3 ил., 1 табл.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD39ffzdw6KDA5x9PHx9HNV8HUMcQ3ydPRRcPMPUnDxDHZW8HEMdg3iYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxQaFGppaGRqbmzobGRCgBALR2I68</recordid><startdate>20160720</startdate><enddate>20160720</enddate><creator>TKACHEV DMITRIJ SERGEEVICH</creator><creator>YAKOVENKO NIKOLAJ ANDREEVICH</creator><creator>GALUTSKIJ VALERIJ VIKTOROVICH</creator><creator>STROGANOVA ELENA VALEREVNA</creator><scope>EVB</scope></search><sort><creationdate>20160720</creationdate><title>MONOCRYSTALLINE MATERIAL FOR DISC LASER</title><author>TKACHEV DMITRIJ SERGEEVICH ; YAKOVENKO NIKOLAJ ANDREEVICH ; GALUTSKIJ VALERIJ VIKTOROVICH ; STROGANOVA ELENA VALEREVNA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_RU2591257C13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; rus</language><creationdate>2016</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>TKACHEV DMITRIJ SERGEEVICH</creatorcontrib><creatorcontrib>YAKOVENKO NIKOLAJ ANDREEVICH</creatorcontrib><creatorcontrib>GALUTSKIJ VALERIJ VIKTOROVICH</creatorcontrib><creatorcontrib>STROGANOVA ELENA VALEREVNA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TKACHEV DMITRIJ SERGEEVICH</au><au>YAKOVENKO NIKOLAJ ANDREEVICH</au><au>GALUTSKIJ VALERIJ VIKTOROVICH</au><au>STROGANOVA ELENA VALEREVNA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MONOCRYSTALLINE MATERIAL FOR DISC LASER</title><date>2016-07-20</date><risdate>2016</risdate><abstract>FIELD: optics.SUBSTANCE: invention relates to laser engineering and concerns monocrystalline material for disc lasers. Monocrystalline material is based on a yttrium aluminium garnet, activated by ytterbium ions. Initial components are taken in accordance with the structural formula Yb:YAlO, where- function of concentration profile change, z - axis of direction of forming the crystal concentration profile, 0<z<1.2.EFFECT: providing smoothed distribution of heat field, the absence of thermal lens inside the active element and increase of maximum size of the generated volume in the active element.1 cl, 3 dwg, 1 tbl
Изобретение относится к области лазерной техники и касается монокристаллического материала для дисковых лазеров. Монокристаллический материал выполнен на основе алюмоиттриевого граната, активированного ионами иттербия. При этом исходные компоненты взяты в соответствии со структурной формулой Yb:YAlO,где- функция изменения концентрационного профиля,z - ось направления формирования концентрационного профиля кристалла, 0<z<1,2. Технический результат заключается в обеспечении сглаженного распределения теплового поля, отсутствии тепловой линзы внутри активного элемента и увеличении предельного размера генерируемого объема в активном элементе. 3 ил., 1 табл.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH DEVICES USING STIMULATED EMISSION ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | MONOCRYSTALLINE MATERIAL FOR DISC LASER |
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