METHOD TO CONVERT ENERGY OF IONISING RADIATION INTO ELECTRIC ENERGY

FIELD: power engineering.SUBSTANCE: method to convert energy of ionising radiation into electric energy includes manufacturing of semiconductor material made of areas with p- and n-types of conductivity in the area of p-n transition, application of layers of various metals onto the surface of the semiconductor material in its different areas, connection of conductors to them and impact at a semiconductor base element-converter on the basis of synthetic diamond by ionising radiation with simultaneous electricity pickup with the help of conductors, at the same time ionising radiation is represented by high-energy sources of alpha radiation with capacity of at least 0.567 W/g, and semiconductor material is synthetic diamond of p-type with boron content of 1014-1016 atoms per cm3, and on its surfaces in various areas with p- and n-types of conductivity in vacuum they apply continuous metal contacts, one of which is a three-layer system of metallisation of titanium-platinum-gold type for positive charge pickup and the other is a potential Schottky barrier - from platinum, gold or iridium for negative charge pickup, which is impacted by ionising radiation, as a result of which inside the diamond they create the area of spatial charges, the latter in the electric field fly away into negative charges, collected on the metal of the Schottky contact, and positive ones, collected on the contact from titanium-platinum-gold, and electricity is picked up from them.EFFECT: development of a method to convert ionising radiation into electric energy, having a more simple scheme to make a semiconductor structure, higher radiation resistance, longer service life of semiconductor material.3 cl, 1 tbl, 1 dwg Изобретение может быть использовано в электронике, приборостроении и машиностроении при создании автономных устройств с большим сроком службы. Способ преобразования энергии ионизирующего излучения в электрическую энергию включает изготовление полупроводникового материала, состоящего из областей с р- и n-типами проводимости в области р-n перехода, нанесение на поверхность полупроводникового материала в разных его областях слоев различных металлов, присоединение к ним проводников и воздействие на полупроводниковый базовый элемент-преобразователь на основе синтетического алмаза ионизирующим излучением с одновременным снятием электричества с помощью проводников, при этом в качестве ионизирующего излучения используют высокоэнергетические источники альфа-излучения мощностью не ме