CONVERTER OF VACUUM ULTRAVIOLET RADIATION INTO RADIATION OF VISIBLE RANGE IN FORM OF AMORPHOUS SILICON OXIDE SiOFILM ON SILICON SUBSTRATE
FIELD: chemistry.SUBSTANCE: invention relates to luminescent materials - converters of vacuum ultraviolet radiation into radiation of a visible range, made in the form of an amorphous silicon oxide SiOfilm on a silicon substrate, intended for the creation of functional elements of photonic devices o...
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| creator | ZATSEPIN ANATOLIJ FEDOROVICH BUNTOV EVGENIJ ALEKSANDROVICH KORTOV VSEVOLOD SEMENOVICH PUSTOVAROV VLADIMIR ALEKSEEVICH |
| description | FIELD: chemistry.SUBSTANCE: invention relates to luminescent materials - converters of vacuum ultraviolet radiation into radiation of a visible range, made in the form of an amorphous silicon oxide SiOfilm on a silicon substrate, intended for the creation of functional elements of photonic devices of the new generation, as well as for control of hard ultraviolet radiation in vacuum technological processes. The amorphous silicon oxide SiOfilm of the converter is 20÷70 nm thick. The content of oxygen ions on the said film corresponds to the quantity at which the stoichiometric coefficient X is within the range from 2.01 to 2.45.EFFECT: increased intensity of red converter radiation, red luminescence is provided with the preservation of conversion of vacuum ultraviolet radiation into visible radiation.6 dwg, 1 tbl, 4 ex
Изобретение относится к люминесцентным материалам - конвертерам вакуумного ультрафиолетового излучения в излучение видимого диапазона, выполненным в виде аморфной пленки оксида кремния SiOна кремниевой подложке, предназначенным для создания функциональных элементов фотонных приборов нового поколения, а также для контроля жесткого ультрафиолетового излучения в вакуумных технологических процессах. Толщина аморфной пленки оксида кремния SiOконвертера составляет 20÷70 нм. Содержание ионов кислорода в упомянутой пленке соответствует количеству, при котором стехиометрический коэффициент Х находится в пределах от 2,01 до 2,45. Увеличиваются интенсивности красного излучения конвертера, а также обеспечивается красное свечение при сохранении конверсии вакуумного ультрафиолетового излучения в видимое. 6 ил., 1 табл., 4 пр. |
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Изобретение относится к люминесцентным материалам - конвертерам вакуумного ультрафиолетового излучения в излучение видимого диапазона, выполненным в виде аморфной пленки оксида кремния SiOна кремниевой подложке, предназначенным для создания функциональных элементов фотонных приборов нового поколения, а также для контроля жесткого ультрафиолетового излучения в вакуумных технологических процессах. Толщина аморфной пленки оксида кремния SiOконвертера составляет 20÷70 нм. Содержание ионов кислорода в упомянутой пленке соответствует количеству, при котором стехиометрический коэффициент Х находится в пределах от 2,01 до 2,45. Увеличиваются интенсивности красного излучения конвертера, а также обеспечивается красное свечение при сохранении конверсии вакуумного ультрафиолетового излучения в видимое. 6 ил., 1 табл., 4 пр.</description><language>eng ; rus</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140820&DB=EPODOC&CC=RU&NR=2526344C1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140820&DB=EPODOC&CC=RU&NR=2526344C1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZATSEPIN ANATOLIJ FEDOROVICH</creatorcontrib><creatorcontrib>BUNTOV EVGENIJ ALEKSANDROVICH</creatorcontrib><creatorcontrib>KORTOV VSEVOLOD SEMENOVICH</creatorcontrib><creatorcontrib>PUSTOVAROV VLADIMIR ALEKSEEVICH</creatorcontrib><title>CONVERTER OF VACUUM ULTRAVIOLET RADIATION INTO RADIATION OF VISIBLE RANGE IN FORM OF AMORPHOUS SILICON OXIDE SiOFILM ON SILICON SUBSTRATE</title><description>FIELD: chemistry.SUBSTANCE: invention relates to luminescent materials - converters of vacuum ultraviolet radiation into radiation of a visible range, made in the form of an amorphous silicon oxide SiOfilm on a silicon substrate, intended for the creation of functional elements of photonic devices of the new generation, as well as for control of hard ultraviolet radiation in vacuum technological processes. The amorphous silicon oxide SiOfilm of the converter is 20÷70 nm thick. The content of oxygen ions on the said film corresponds to the quantity at which the stoichiometric coefficient X is within the range from 2.01 to 2.45.EFFECT: increased intensity of red converter radiation, red luminescence is provided with the preservation of conversion of vacuum ultraviolet radiation into visible radiation.6 dwg, 1 tbl, 4 ex
Изобретение относится к люминесцентным материалам - конвертерам вакуумного ультрафиолетового излучения в излучение видимого диапазона, выполненным в виде аморфной пленки оксида кремния SiOна кремниевой подложке, предназначенным для создания функциональных элементов фотонных приборов нового поколения, а также для контроля жесткого ультрафиолетового излучения в вакуумных технологических процессах. Толщина аморфной пленки оксида кремния SiOконвертера составляет 20÷70 нм. Содержание ионов кислорода в упомянутой пленке соответствует количеству, при котором стехиометрический коэффициент Х находится в пределах от 2,01 до 2,45. Увеличиваются интенсивности красного излучения конвертера, а также обеспечивается красное свечение при сохранении конверсии вакуумного ультрафиолетового излучения в видимое. 6 ил., 1 табл., 4 пр.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjU0KwjAQhbtxIeod5gIubNV9mk7sQJqR_BR3pUgEQbRQL-GtTUHEpavHe98Hb569JJsWrUcLrKAVMoQGgvZWtMQaPVhRkfDEBsh4_qmTTo5KjWk0B0wcFNtmAqJhe6w5OHCkSU72iSoEd2VFOinmC1woXXrzuMxml_42xtUnFxko9LJex-HRxXHoz_Een50N-S7fF9ut3BR_KG9jPj7T</recordid><startdate>20140820</startdate><enddate>20140820</enddate><creator>ZATSEPIN ANATOLIJ FEDOROVICH</creator><creator>BUNTOV EVGENIJ ALEKSANDROVICH</creator><creator>KORTOV VSEVOLOD SEMENOVICH</creator><creator>PUSTOVAROV VLADIMIR ALEKSEEVICH</creator><scope>EVB</scope></search><sort><creationdate>20140820</creationdate><title>CONVERTER OF VACUUM ULTRAVIOLET RADIATION INTO RADIATION OF VISIBLE RANGE IN FORM OF AMORPHOUS SILICON OXIDE SiOFILM ON SILICON SUBSTRATE</title><author>ZATSEPIN ANATOLIJ FEDOROVICH ; BUNTOV EVGENIJ ALEKSANDROVICH ; KORTOV VSEVOLOD SEMENOVICH ; PUSTOVAROV VLADIMIR ALEKSEEVICH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_RU2526344C13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; rus</language><creationdate>2014</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ZATSEPIN ANATOLIJ FEDOROVICH</creatorcontrib><creatorcontrib>BUNTOV EVGENIJ ALEKSANDROVICH</creatorcontrib><creatorcontrib>KORTOV VSEVOLOD SEMENOVICH</creatorcontrib><creatorcontrib>PUSTOVAROV VLADIMIR ALEKSEEVICH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZATSEPIN ANATOLIJ FEDOROVICH</au><au>BUNTOV EVGENIJ ALEKSANDROVICH</au><au>KORTOV VSEVOLOD SEMENOVICH</au><au>PUSTOVAROV VLADIMIR ALEKSEEVICH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CONVERTER OF VACUUM ULTRAVIOLET RADIATION INTO RADIATION OF VISIBLE RANGE IN FORM OF AMORPHOUS SILICON OXIDE SiOFILM ON SILICON SUBSTRATE</title><date>2014-08-20</date><risdate>2014</risdate><abstract>FIELD: chemistry.SUBSTANCE: invention relates to luminescent materials - converters of vacuum ultraviolet radiation into radiation of a visible range, made in the form of an amorphous silicon oxide SiOfilm on a silicon substrate, intended for the creation of functional elements of photonic devices of the new generation, as well as for control of hard ultraviolet radiation in vacuum technological processes. The amorphous silicon oxide SiOfilm of the converter is 20÷70 nm thick. The content of oxygen ions on the said film corresponds to the quantity at which the stoichiometric coefficient X is within the range from 2.01 to 2.45.EFFECT: increased intensity of red converter radiation, red luminescence is provided with the preservation of conversion of vacuum ultraviolet radiation into visible radiation.6 dwg, 1 tbl, 4 ex
Изобретение относится к люминесцентным материалам - конвертерам вакуумного ультрафиолетового излучения в излучение видимого диапазона, выполненным в виде аморфной пленки оксида кремния SiOна кремниевой подложке, предназначенным для создания функциональных элементов фотонных приборов нового поколения, а также для контроля жесткого ультрафиолетового излучения в вакуумных технологических процессах. Толщина аморфной пленки оксида кремния SiOконвертера составляет 20÷70 нм. Содержание ионов кислорода в упомянутой пленке соответствует количеству, при котором стехиометрический коэффициент Х находится в пределах от 2,01 до 2,45. Увеличиваются интенсивности красного излучения конвертера, а также обеспечивается красное свечение при сохранении конверсии вакуумного ультрафиолетового излучения в видимое. 6 ил., 1 табл., 4 пр.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | CONVERTER OF VACUUM ULTRAVIOLET RADIATION INTO RADIATION OF VISIBLE RANGE IN FORM OF AMORPHOUS SILICON OXIDE SiOFILM ON SILICON SUBSTRATE |
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