CONTACT SHAPING METHOD FOR NANOHETEROSTRUCTURE OF PHOTOELECTRIC CONVERTER BASED ON GALLIUM ARSENIDE

FIELD: electricity. ^ SUBSTANCE: invention can be used in production technologies of ohmic contact systems to photoelectric converters (PC) with high operating characteristics and namely the invention refers to formation of contacts to GaAs layers of n-type conductivity, which are front layers of th...

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Bibliographische Detailangaben

Hauptverfasser:	KALJUZHNYJ NIKOLAJ ALEKSANDROVICH, USIKOVA ANNA ALEKSANDROVNA, SOLDATENKOV FEDOR JUR'EVICH, ANDREEV VJACHESLAV MIKHAJLOVICH, LANTRATOV VLADIMIR MIKHAJLOVICH
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT THEREOF NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING
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