PROCEDURE FOR FORMING LAYER OF POLY-CRYSTALLINE SILICON ON CORE BASE

FIELD: metallurgy. ^ SUBSTANCE: procedure is performed in reactor and consists in hydrogen reduction of mixture of chlorine-silane with thermal decomposition of silane, in sedimentation to required thickness of layer of poly-crystal silicon on core base heated to 1100-1200C. Also, poly-crystal silic...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NALESNIK OLEG IVANOVICH, OBRAZTSOV SERGEJ VIKTOROVICH, GREBNEV VASILIJ ALEKSANDROVICH, DMITRIENKO VIKTOR PETROVICH
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!