METHOD FOR GROWING OF HOLLOW CYLINDRICAL SINGLE CRYSTALS OF SILICON BASED ON CHOKHRALSKY METHOD AND DEVICE FOR ITS REALISATION

FIELD: technological processes. ^ SUBSTANCE: invention is related to the field of electronic engineering, in particular to technology for growth of profiled single-crystals of silicon in the form of hollow thin-walled cylinders to make epitaxial cylindrical (non-planar) structures of strong power se...

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Hauptverfasser:	KAZIMIROV NIKOLAJ IVANOVICH, KRAPUKHIN VSEVOLOD VALER'EVICH, SOROKIN SERGEJ LEONIDOVICH, SILAEV IVAN VADIMOVICH, KOZHITOV LEV VASIL'EVICH, KONDRATENKO TIMOFEJ TIMOFEEVICH, TARADEJ VLADIMIR ALEKSANDROVICH, BLIEV ALEKSANDR PETROVICH
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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