METHOD OF OBTAINING SYNTHETIC MINERALS
FIELD: chemistry. ^ SUBSTANCE: invention concerns obtaining synthetic minerals and can be applied in technics and jewellery. Method of artificial mineral synthesis is implemented by crucible method involving blend processing in plasma torch of plasmotron to obtain melt, melt drop feeding into crucib...
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| creator | KROKHIN VOL'T PAVLOVICH DJUMINA POLINA SEMENOVNA BESSMERTNYJ VASILIJ STEPANOVICH SEMENENKO SERGEJ VIKTOROVICH SIMACHEV ALEKSANDR VIKTOROVICH MIN'KO NINA IVANOVNA |
| description | FIELD: chemistry. ^ SUBSTANCE: invention concerns obtaining synthetic minerals and can be applied in technics and jewellery. Method of artificial mineral synthesis is implemented by crucible method involving blend processing in plasma torch of plasmotron to obtain melt, melt drop feeding into crucible by plasma-forming gas flow with further crystallisation. Seeding agent is placed at crucible bottom in advance, and synthesis is performed at plasmotron output of 12 kW and blend feed rate of 2-3 g/min with simultaneous annealing of the melt crystallised on seeding agent in annular furnace for 2-3 hours at 1000°C. Preliminary placement of seeding agent to crucible bottom ensures accelerated crystal growth and higher process performance. Simultaneous annealing of artificial minerals reduces tension in end product significantly. ^ EFFECT: simplified instrumentation of synthesis processing line, reduced power cost of production. ^ 2 ex, 1 dwg, 4 tbl |
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Method of artificial mineral synthesis is implemented by crucible method involving blend processing in plasma torch of plasmotron to obtain melt, melt drop feeding into crucible by plasma-forming gas flow with further crystallisation. Seeding agent is placed at crucible bottom in advance, and synthesis is performed at plasmotron output of 12 kW and blend feed rate of 2-3 g/min with simultaneous annealing of the melt crystallised on seeding agent in annular furnace for 2-3 hours at 1000°C. Preliminary placement of seeding agent to crucible bottom ensures accelerated crystal growth and higher process performance. Simultaneous annealing of artificial minerals reduces tension in end product significantly. ^ EFFECT: simplified instrumentation of synthesis processing line, reduced power cost of production. ^ 2 ex, 1 dwg, 4 tbl</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; rus |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD OF OBTAINING SYNTHETIC MINERALS |
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