ELECTRICAL SEMICONDUCTOR SURFACE PASSIVATION METHOD
FIELD: physics. ^ SUBSTANCE: electrical semiconductor surface passivation method involves preparation of the surface of the semiconductor for passivation, intermediate passivation, providing for conditions for precipitation of the passivating monolayer, and depositing of a 1-alkene monolayer, partic...
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| creator | PRINTS VIKTOR JAKOVLEVICH ANTONOVA IRINA VENIAMINOVNA SOOTS REGINA AL'FREDOVNA GULJAEV MITROFAN BORISOVICH |
| description | FIELD: physics. ^ SUBSTANCE: electrical semiconductor surface passivation method involves preparation of the surface of the semiconductor for passivation, intermediate passivation, providing for conditions for precipitation of the passivating monolayer, and depositing of a 1-alkene monolayer, particularly 1-octadecene. The depositing process is carried out during photo-stimulation or thermal stimulation in a mode, providing for charge in the monolayer of less than 1011 cm-2, or the final thermal treatment is carried out, which reduces the charge value, leading to surface curving of the zone. Without final thermal treatment, photo-stimulation is carried out for 1.52.5 hours at 265 nm wavelength, with 18 W/cm2 power and distance from the ultraviolet source to the substrate between 2 cm and 4 cm. Thermal stimulation is carried out for 1218 hours at 150170C, with final thermal treatment for 15 hours at 265 nm wavelength, 18 W/cm2 power and distance from the ultraviolet source to the substrate between 1 cm and 10 cm, and for 6-18 hours at 110180C respectively. Final thermal treatment is carried out at 180260C for 1030 minutes. Intermediate passivation is carried out using hydrogen or using hydrogen first and then iodine or bromine or fluorine. ^ EFFECT: stability of the effect; improved properties. ^ 10 cl |
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The depositing process is carried out during photo-stimulation or thermal stimulation in a mode, providing for charge in the monolayer of less than 1011 cm-2, or the final thermal treatment is carried out, which reduces the charge value, leading to surface curving of the zone. Without final thermal treatment, photo-stimulation is carried out for 1.52.5 hours at 265 nm wavelength, with 18 W/cm2 power and distance from the ultraviolet source to the substrate between 2 cm and 4 cm. Thermal stimulation is carried out for 1218 hours at 150170C, with final thermal treatment for 15 hours at 265 nm wavelength, 18 W/cm2 power and distance from the ultraviolet source to the substrate between 1 cm and 10 cm, and for 6-18 hours at 110180C respectively. Final thermal treatment is carried out at 180260C for 1030 minutes. 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The depositing process is carried out during photo-stimulation or thermal stimulation in a mode, providing for charge in the monolayer of less than 1011 cm-2, or the final thermal treatment is carried out, which reduces the charge value, leading to surface curving of the zone. Without final thermal treatment, photo-stimulation is carried out for 1.52.5 hours at 265 nm wavelength, with 18 W/cm2 power and distance from the ultraviolet source to the substrate between 2 cm and 4 cm. Thermal stimulation is carried out for 1218 hours at 150170C, with final thermal treatment for 15 hours at 265 nm wavelength, 18 W/cm2 power and distance from the ultraviolet source to the substrate between 1 cm and 10 cm, and for 6-18 hours at 110180C respectively. Final thermal treatment is carried out at 180260C for 1030 minutes. Intermediate passivation is carried out using hydrogen or using hydrogen first and then iodine or bromine or fluorine. ^ EFFECT: stability of the effect; improved properties. ^ 10 cl</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | ELECTRICAL SEMICONDUCTOR SURFACE PASSIVATION METHOD |
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