METHOD FOR PRODUCING OF CABTILEVER OF SCANNING PROBE MICROSCOPE
FIELD: physics. ^ SUBSTANCE: invention is related to the field of manufacture of micromechanical devices, namely to methods of formation of scanning probe microscope probes, in particular, cantilevers consisting of console and needle. In method of cantilever manufacture that includes formation of KD...
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| creator | MATVEEVA NADEZHDA KONSTANTINOVNA SHOKIN ALEKSEJ NIKIFOROVICH IVANOVA LARISA ALEKSANDROVNA |
| description | FIELD: physics. ^ SUBSTANCE: invention is related to the field of manufacture of micromechanical devices, namely to methods of formation of scanning probe microscope probes, in particular, cantilevers consisting of console and needle. In method of cantilever manufacture that includes formation of KDB on top surface of single-crystal silicic wafer with orientation (100) of cantilever needle by method of local anisotropic etching of silicon, formation of p-n transition on top side of wafer, local electrochemical etching of wafer from the back side to p-n transition with creation of silicic membrane, formation of cantilever console from the saidmembrane by means of local anisotropic etching of membrane from both sides of plate with application of mask that protects needle and top part of console, needle of cantilever is formed prior to formation of p-n transition. Depth of n-layer amounts to doubled thickness of console, and mask for local anisotropic etching of membrane is received by method of lift-off lithography with application of bottom "sacrificial" layer and top masking layer from chemically low-activity metal. ^ EFFECT: obtaining of cantilever with reproduced geometric parameters of console and higher resolution of needle. ^ 3 cl, 15 dwg |
| format | Patent |
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In method of cantilever manufacture that includes formation of KDB on top surface of single-crystal silicic wafer with orientation (100) of cantilever needle by method of local anisotropic etching of silicon, formation of p-n transition on top side of wafer, local electrochemical etching of wafer from the back side to p-n transition with creation of silicic membrane, formation of cantilever console from the saidmembrane by means of local anisotropic etching of membrane from both sides of plate with application of mask that protects needle and top part of console, needle of cantilever is formed prior to formation of p-n transition. Depth of n-layer amounts to doubled thickness of console, and mask for local anisotropic etching of membrane is received by method of lift-off lithography with application of bottom "sacrificial" layer and top masking layer from chemically low-activity metal. ^ EFFECT: obtaining of cantilever with reproduced geometric parameters of console and higher resolution of needle. ^ 3 cl, 15 dwg</description><language>eng ; rus</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OR TREATMENT THEREOF ; NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080927&DB=EPODOC&CC=RU&NR=2335033C1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080927&DB=EPODOC&CC=RU&NR=2335033C1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATVEEVA NADEZHDA KONSTANTINOVNA</creatorcontrib><creatorcontrib>SHOKIN ALEKSEJ NIKIFOROVICH</creatorcontrib><creatorcontrib>IVANOVA LARISA ALEKSANDROVNA</creatorcontrib><title>METHOD FOR PRODUCING OF CABTILEVER OF SCANNING PROBE MICROSCOPE</title><description>FIELD: physics. ^ SUBSTANCE: invention is related to the field of manufacture of micromechanical devices, namely to methods of formation of scanning probe microscope probes, in particular, cantilevers consisting of console and needle. In method of cantilever manufacture that includes formation of KDB on top surface of single-crystal silicic wafer with orientation (100) of cantilever needle by method of local anisotropic etching of silicon, formation of p-n transition on top side of wafer, local electrochemical etching of wafer from the back side to p-n transition with creation of silicic membrane, formation of cantilever console from the saidmembrane by means of local anisotropic etching of membrane from both sides of plate with application of mask that protects needle and top part of console, needle of cantilever is formed prior to formation of p-n transition. Depth of n-layer amounts to doubled thickness of console, and mask for local anisotropic etching of membrane is received by method of lift-off lithography with application of bottom "sacrificial" layer and top masking layer from chemically low-activity metal. ^ EFFECT: obtaining of cantilever with reproduced geometric parameters of console and higher resolution of needle. ^ 3 cl, 15 dwg</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MANUFACTURE OR TREATMENT THEREOF</subject><subject>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD3dQ3x8HdRcPMPUggI8ncJdfb0c1fwd1NwdnQK8fRxDXMNAvGCnR39_EAyQDVOrgq-ns5B_sHO_gGuPAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7UkPijUyNjY1MDY2NnQmAglACMrKfc</recordid><startdate>20080927</startdate><enddate>20080927</enddate><creator>MATVEEVA NADEZHDA KONSTANTINOVNA</creator><creator>SHOKIN ALEKSEJ NIKIFOROVICH</creator><creator>IVANOVA LARISA ALEKSANDROVNA</creator><scope>EVB</scope></search><sort><creationdate>20080927</creationdate><title>METHOD FOR PRODUCING OF CABTILEVER OF SCANNING PROBE MICROSCOPE</title><author>MATVEEVA NADEZHDA KONSTANTINOVNA ; SHOKIN ALEKSEJ NIKIFOROVICH ; IVANOVA LARISA ALEKSANDROVNA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_RU2335033C13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; rus</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MANUFACTURE OR TREATMENT THEREOF</topic><topic>NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MATVEEVA NADEZHDA KONSTANTINOVNA</creatorcontrib><creatorcontrib>SHOKIN ALEKSEJ NIKIFOROVICH</creatorcontrib><creatorcontrib>IVANOVA LARISA ALEKSANDROVNA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATVEEVA NADEZHDA KONSTANTINOVNA</au><au>SHOKIN ALEKSEJ NIKIFOROVICH</au><au>IVANOVA LARISA ALEKSANDROVNA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR PRODUCING OF CABTILEVER OF SCANNING PROBE MICROSCOPE</title><date>2008-09-27</date><risdate>2008</risdate><abstract>FIELD: physics. ^ SUBSTANCE: invention is related to the field of manufacture of micromechanical devices, namely to methods of formation of scanning probe microscope probes, in particular, cantilevers consisting of console and needle. In method of cantilever manufacture that includes formation of KDB on top surface of single-crystal silicic wafer with orientation (100) of cantilever needle by method of local anisotropic etching of silicon, formation of p-n transition on top side of wafer, local electrochemical etching of wafer from the back side to p-n transition with creation of silicic membrane, formation of cantilever console from the saidmembrane by means of local anisotropic etching of membrane from both sides of plate with application of mask that protects needle and top part of console, needle of cantilever is formed prior to formation of p-n transition. Depth of n-layer amounts to doubled thickness of console, and mask for local anisotropic etching of membrane is received by method of lift-off lithography with application of bottom "sacrificial" layer and top masking layer from chemically low-activity metal. ^ EFFECT: obtaining of cantilever with reproduced geometric parameters of console and higher resolution of needle. ^ 3 cl, 15 dwg</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT THEREOF NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING |
| title | METHOD FOR PRODUCING OF CABTILEVER OF SCANNING PROBE MICROSCOPE |
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