SEMICONDUCTOR ANTIFERROMAGNETIC MATERIAL

FIELD: metal oxide based materials including complex oxide based homogeneous polycrystalline ones; magnetoelectronics. ^ SUBSTANCE: proposed antiferromagnetic semiconductor material is characterized in temperature of transfer to paramagnetic state TN = 600-650 K and is essentially solid homogeneous...

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Hauptverfasser:	KETSKO VALERIJ ALEKSANDROVICH, NIPAN GEORGIJ DONATOVICH, KUZNETSOV NIKOLAJ TIMOFEEVICH, KOL'TSOVA TAT'JANA NIKOLAEVNA, JANUSHKEVICH KAZIMIR IOSIFOVICH, STOGNIJ ALEKSANDR IVANOVICH
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRICITY INDUCTANCES MAGNETS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSFORMERS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	FIELD: metal oxide based materials including complex oxide based homogeneous polycrystalline ones; magnetoelectronics. ^ SUBSTANCE: proposed antiferromagnetic semiconductor material is characterized in temperature of transfer to paramagnetic state TN = 600-650 K and is essentially solid homogeneous solution of zinc and cobalt oxides Zn1-xCoxO, where X = 0.01 - 0.25; or solid homogeneous solution of zinc, cobalt, and lanthanide oxides Zn1-xCox-yOLnyO, where Ln - Pr, Nd, Sm or Eu; X = 0.01-0.24; Y = 0.01-0.03; X + Y