SEMICONDUCTOR LIGHT SOURCE

SEMICONDUCTOR LIGHT SOURCE

FIELD: solid state electronics; high-power light sources built around semiconductor light-emitting chips. SUBSTANCE: semiconductor light source has substrate of silicon wafer wherein at least one depression is made to receive electroluminescent semiconductor chip with ohmic contacts. Metal- sprayed...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ITKINSON G.V, ZAKGEJM A.L, VASIL'EVA E.D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ITKINSON G.V
ZAKGEJM A.L
VASIL'EVA E.D
description FIELD: solid state electronics; high-power light sources built around semiconductor light-emitting chips. SUBSTANCE: semiconductor light source has substrate of silicon wafer wherein at least one depression is made to receive electroluminescent semiconductor chip with ohmic contacts. Metal- sprayed current-conducting sections are formed on substrate surface and also on side surface and bottom of depression; metal-sprayed conducting section made on bottom forms contact pad which is connected to one of ohmic contacts of semiconductor chip. Novelty is that one more metal sprayed section insulated from first one is formed on depression bottom and connected to other ohmic contact of semiconductor chip. Metal-sprayed current-conducting sections on side surface of depression are made in the form of buses, each being connected to one of contact pads on bottom of depression and to metal-sprayed conducting section on substrate surface; mentioned metal-sprayed conducting sections on substrate surface are insulated from each other. EFFECT: enhanced optical power and operating reliability. 3 cl, 2 dwg
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_RU2212734C1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>RU2212734C1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_RU2212734C13</originalsourceid><addsrcrecordid>eNrjZJAKdvX1dPb3cwl1DvEPUvDxdPcIUQj2Dw1yduVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFBoUZGhkbmxibOhsZEKAEACoogIw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR LIGHT SOURCE</title><source>esp@cenet</source><creator>ITKINSON G.V ; ZAKGEJM A.L ; VASIL'EVA E.D</creator><creatorcontrib>ITKINSON G.V ; ZAKGEJM A.L ; VASIL'EVA E.D</creatorcontrib><description>FIELD: solid state electronics; high-power light sources built around semiconductor light-emitting chips. SUBSTANCE: semiconductor light source has substrate of silicon wafer wherein at least one depression is made to receive electroluminescent semiconductor chip with ohmic contacts. Metal- sprayed current-conducting sections are formed on substrate surface and also on side surface and bottom of depression; metal-sprayed conducting section made on bottom forms contact pad which is connected to one of ohmic contacts of semiconductor chip. Novelty is that one more metal sprayed section insulated from first one is formed on depression bottom and connected to other ohmic contact of semiconductor chip. Metal-sprayed current-conducting sections on side surface of depression are made in the form of buses, each being connected to one of contact pads on bottom of depression and to metal-sprayed conducting section on substrate surface; mentioned metal-sprayed conducting sections on substrate surface are insulated from each other. EFFECT: enhanced optical power and operating reliability. 3 cl, 2 dwg</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20030920&amp;DB=EPODOC&amp;CC=RU&amp;NR=2212734C1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20030920&amp;DB=EPODOC&amp;CC=RU&amp;NR=2212734C1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITKINSON G.V</creatorcontrib><creatorcontrib>ZAKGEJM A.L</creatorcontrib><creatorcontrib>VASIL'EVA E.D</creatorcontrib><title>SEMICONDUCTOR LIGHT SOURCE</title><description>FIELD: solid state electronics; high-power light sources built around semiconductor light-emitting chips. SUBSTANCE: semiconductor light source has substrate of silicon wafer wherein at least one depression is made to receive electroluminescent semiconductor chip with ohmic contacts. Metal- sprayed current-conducting sections are formed on substrate surface and also on side surface and bottom of depression; metal-sprayed conducting section made on bottom forms contact pad which is connected to one of ohmic contacts of semiconductor chip. Novelty is that one more metal sprayed section insulated from first one is formed on depression bottom and connected to other ohmic contact of semiconductor chip. Metal-sprayed current-conducting sections on side surface of depression are made in the form of buses, each being connected to one of contact pads on bottom of depression and to metal-sprayed conducting section on substrate surface; mentioned metal-sprayed conducting sections on substrate surface are insulated from each other. EFFECT: enhanced optical power and operating reliability. 3 cl, 2 dwg</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAKdvX1dPb3cwl1DvEPUvDxdPcIUQj2Dw1yduVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFBoUZGhkbmxibOhsZEKAEACoogIw</recordid><startdate>20030920</startdate><enddate>20030920</enddate><creator>ITKINSON G.V</creator><creator>ZAKGEJM A.L</creator><creator>VASIL'EVA E.D</creator><scope>EVB</scope></search><sort><creationdate>20030920</creationdate><title>SEMICONDUCTOR LIGHT SOURCE</title><author>ITKINSON G.V ; ZAKGEJM A.L ; VASIL'EVA E.D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_RU2212734C13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ITKINSON G.V</creatorcontrib><creatorcontrib>ZAKGEJM A.L</creatorcontrib><creatorcontrib>VASIL'EVA E.D</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ITKINSON G.V</au><au>ZAKGEJM A.L</au><au>VASIL'EVA E.D</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR LIGHT SOURCE</title><date>2003-09-20</date><risdate>2003</risdate><abstract>FIELD: solid state electronics; high-power light sources built around semiconductor light-emitting chips. SUBSTANCE: semiconductor light source has substrate of silicon wafer wherein at least one depression is made to receive electroluminescent semiconductor chip with ohmic contacts. Metal- sprayed current-conducting sections are formed on substrate surface and also on side surface and bottom of depression; metal-sprayed conducting section made on bottom forms contact pad which is connected to one of ohmic contacts of semiconductor chip. Novelty is that one more metal sprayed section insulated from first one is formed on depression bottom and connected to other ohmic contact of semiconductor chip. Metal-sprayed current-conducting sections on side surface of depression are made in the form of buses, each being connected to one of contact pads on bottom of depression and to metal-sprayed conducting section on substrate surface; mentioned metal-sprayed conducting sections on substrate surface are insulated from each other. EFFECT: enhanced optical power and operating reliability. 3 cl, 2 dwg</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_RU2212734C1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR LIGHT SOURCE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T05%3A53%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ITKINSON%20G.V&rft.date=2003-09-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ERU2212734C1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true