METHOD FOR PRODUCING QUASI-BICRYSTAL ZINC OXIDE STRUCTURES

METHOD FOR PRODUCING QUASI-BICRYSTAL ZINC OXIDE STRUCTURES

FIELD: electronic material science. SUBSTANCE: part of single-crystalline substrate is covered with thin basic grain oriented layer by magnetron spraying with use of mask, substrate temperature being not over 500 K. Epitaxial layers are grown on entire substrate surface by method of chemical transpo...

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Hauptverfasser: MAMEDOV V.V, ATAEV B.M, OMAEV A.K, KAMILOV I.K, BAGAMADOVA A.M, MAKHMUDOV S.SH
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MAMEDOV V.V
ATAEV B.M
OMAEV A.K
KAMILOV I.K
BAGAMADOVA A.M
MAKHMUDOV S.SH
description FIELD: electronic material science. SUBSTANCE: part of single-crystalline substrate is covered with thin basic grain oriented layer by magnetron spraying with use of mask, substrate temperature being not over 500 K. Epitaxial layers are grown on entire substrate surface by method of chemical transport reactions to form degenerate structural junction . EFFECT: provision for producing quasi-bicrystal zinc oxide structures. 2 dwg
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR PRODUCING QUASI-BICRYSTAL ZINC OXIDE STRUCTURES
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