DEVICE FOR GROWING PROFILED CRYSTALS FROM SOLUTION
FIELD: crystal growing from aqueous solutions; may be used in accelerated growing of single crystals of preset shape and crystallographic orientation, for example, crystals of potassium dehydrophosphste group. SUBSTANCE: crystal growing chamber installed on rod inside crystallizer filled with salt s...
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| creator | KATSMAN V.I |
| description | FIELD: crystal growing from aqueous solutions; may be used in accelerated growing of single crystals of preset shape and crystallographic orientation, for example, crystals of potassium dehydrophosphste group. SUBSTANCE: crystal growing chamber installed on rod inside crystallizer filled with salt solution and is made so that internal sizes of its longitudinal walls parallel to plane of pumping of immersion pump with nozzle are governed by size of grown crystal aperture; and width of transverse walls is determined by crystal required thickness. In this case, upper edges of chamber longitudinal walls and lower edges of nozzle longitudinal walls are made in the form of arcs of circumferences with respective radii R1 and R2 related by relation 0.1 mm 3 mm. Each pair of circumferences with radii R1 and R2 has its center located on axis of pump pumping, and lateral size of nozzle is selected equal to width of transverse walls of chamber. The device provides for growing of profiled high-quality single crystals of large aperture and small thickness with any required orientation of crystallographic axes. EFFECT: higher efficiency. 2 cl, 1 dwg |
| format | Patent |
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SUBSTANCE: crystal growing chamber installed on rod inside crystallizer filled with salt solution and is made so that internal sizes of its longitudinal walls parallel to plane of pumping of immersion pump with nozzle are governed by size of grown crystal aperture; and width of transverse walls is determined by crystal required thickness. In this case, upper edges of chamber longitudinal walls and lower edges of nozzle longitudinal walls are made in the form of arcs of circumferences with respective radii R1 and R2 related by relation 0.1 mm 3 mm. Each pair of circumferences with radii R1 and R2 has its center located on axis of pump pumping, and lateral size of nozzle is selected equal to width of transverse walls of chamber. The device provides for growing of profiled high-quality single crystals of large aperture and small thickness with any required orientation of crystallographic axes. EFFECT: higher efficiency. 2 cl, 1 dwg</description><edition>6</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1999</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990720&DB=EPODOC&CC=RU&NR=2133307C1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19990720&DB=EPODOC&CC=RU&NR=2133307C1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KATSMAN V.I</creatorcontrib><title>DEVICE FOR GROWING PROFILED CRYSTALS FROM SOLUTION</title><description>FIELD: crystal growing from aqueous solutions; may be used in accelerated growing of single crystals of preset shape and crystallographic orientation, for example, crystals of potassium dehydrophosphste group. SUBSTANCE: crystal growing chamber installed on rod inside crystallizer filled with salt solution and is made so that internal sizes of its longitudinal walls parallel to plane of pumping of immersion pump with nozzle are governed by size of grown crystal aperture; and width of transverse walls is determined by crystal required thickness. In this case, upper edges of chamber longitudinal walls and lower edges of nozzle longitudinal walls are made in the form of arcs of circumferences with respective radii R1 and R2 related by relation 0.1 mm 3 mm. Each pair of circumferences with radii R1 and R2 has its center located on axis of pump pumping, and lateral size of nozzle is selected equal to width of transverse walls of chamber. The device provides for growing of profiled high-quality single crystals of large aperture and small thickness with any required orientation of crystallographic axes. EFFECT: higher efficiency. 2 cl, 1 dwg</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1999</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBycQ3zdHZVcPMPUnAP8g_39HNXCAjyd_P0cXVRcA6KDA5x9AlWcAvy91UI9vcJDfH09-NhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFBoUaGxsbGBubOhsZEKAEARHgmvg</recordid><startdate>19990720</startdate><enddate>19990720</enddate><creator>KATSMAN V.I</creator><scope>EVB</scope></search><sort><creationdate>19990720</creationdate><title>DEVICE FOR GROWING PROFILED CRYSTALS FROM SOLUTION</title><author>KATSMAN V.I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_RU2133307C13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1999</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>KATSMAN V.I</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KATSMAN V.I</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEVICE FOR GROWING PROFILED CRYSTALS FROM SOLUTION</title><date>1999-07-20</date><risdate>1999</risdate><abstract>FIELD: crystal growing from aqueous solutions; may be used in accelerated growing of single crystals of preset shape and crystallographic orientation, for example, crystals of potassium dehydrophosphste group. SUBSTANCE: crystal growing chamber installed on rod inside crystallizer filled with salt solution and is made so that internal sizes of its longitudinal walls parallel to plane of pumping of immersion pump with nozzle are governed by size of grown crystal aperture; and width of transverse walls is determined by crystal required thickness. In this case, upper edges of chamber longitudinal walls and lower edges of nozzle longitudinal walls are made in the form of arcs of circumferences with respective radii R1 and R2 related by relation 0.1 mm 3 mm. Each pair of circumferences with radii R1 and R2 has its center located on axis of pump pumping, and lateral size of nozzle is selected equal to width of transverse walls of chamber. The device provides for growing of profiled high-quality single crystals of large aperture and small thickness with any required orientation of crystallographic axes. EFFECT: higher efficiency. 2 cl, 1 dwg</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | DEVICE FOR GROWING PROFILED CRYSTALS FROM SOLUTION |
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