METHOD FOR PRODUCING SEMICONDUCTOR-ON-POROUS- SILICON STRUCTURE
FIELD: microelectronics; manufacture of high-speed digital and analog-to- digital integrated circuits on insulating substrates. SUBSTANCE: method involves anode etching of highly doped single-crystalline p- type silicon substrate in hydrofluoric acid solution, drying out in oxygen environment, remov...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SOKOLOV L.V ROMANOV S.I MASHANOV V.I KIRIENKO V.V LAMIN M.A |
| description | FIELD: microelectronics; manufacture of high-speed digital and analog-to- digital integrated circuits on insulating substrates. SUBSTANCE: method involves anode etching of highly doped single-crystalline p- type silicon substrate in hydrofluoric acid solution, drying out in oxygen environment, removal of silicon oxide from porous layer surface by molecular silicon stream, and semiconductor epitaxy on porous layer surface. Upon anode etching, silicon substrate with porous layer is rinsed in deionized water, then subjected to anode oxidation in hydrochloric acid solution, and rinsed again in deionized water; epitaxy is conducted using both elementary semiconductors and semiconductor compounds. Highly doped single-crystalline p- type silicon of commercial quality is used for substrate manufacture. EFFECT: improved resistance of porous layer, reduced high-purity silicon requirement, provision for manufacturing epitaxial film from both elementary semiconductors and semiconductor compounds. 2 cl, 11 dwgg |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_RU2123218C1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>RU2123218C1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_RU2123218C13</originalsourceid><addsrcrecordid>eNrjZLD3dQ3x8HdRcPMPUggI8ncJdfb0c1cIdvX1dPb3A_JC_IN0_f10A_yD_EODdRWCPX1AEgrBIUFAudAgVx4G1rTEnOJUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEh8UamRoZGxkaOFsaEyEEgBrwyqc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR PRODUCING SEMICONDUCTOR-ON-POROUS- SILICON STRUCTURE</title><source>esp@cenet</source><creator>SOKOLOV L.V ; ROMANOV S.I ; MASHANOV V.I ; KIRIENKO V.V ; LAMIN M.A</creator><creatorcontrib>SOKOLOV L.V ; ROMANOV S.I ; MASHANOV V.I ; KIRIENKO V.V ; LAMIN M.A</creatorcontrib><description>FIELD: microelectronics; manufacture of high-speed digital and analog-to- digital integrated circuits on insulating substrates. SUBSTANCE: method involves anode etching of highly doped single-crystalline p- type silicon substrate in hydrofluoric acid solution, drying out in oxygen environment, removal of silicon oxide from porous layer surface by molecular silicon stream, and semiconductor epitaxy on porous layer surface. Upon anode etching, silicon substrate with porous layer is rinsed in deionized water, then subjected to anode oxidation in hydrochloric acid solution, and rinsed again in deionized water; epitaxy is conducted using both elementary semiconductors and semiconductor compounds. Highly doped single-crystalline p- type silicon of commercial quality is used for substrate manufacture. EFFECT: improved resistance of porous layer, reduced high-purity silicon requirement, provision for manufacturing epitaxial film from both elementary semiconductors and semiconductor compounds. 2 cl, 11 dwgg</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1998</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981210&DB=EPODOC&CC=RU&NR=2123218C1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19981210&DB=EPODOC&CC=RU&NR=2123218C1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SOKOLOV L.V</creatorcontrib><creatorcontrib>ROMANOV S.I</creatorcontrib><creatorcontrib>MASHANOV V.I</creatorcontrib><creatorcontrib>KIRIENKO V.V</creatorcontrib><creatorcontrib>LAMIN M.A</creatorcontrib><title>METHOD FOR PRODUCING SEMICONDUCTOR-ON-POROUS- SILICON STRUCTURE</title><description>FIELD: microelectronics; manufacture of high-speed digital and analog-to- digital integrated circuits on insulating substrates. SUBSTANCE: method involves anode etching of highly doped single-crystalline p- type silicon substrate in hydrofluoric acid solution, drying out in oxygen environment, removal of silicon oxide from porous layer surface by molecular silicon stream, and semiconductor epitaxy on porous layer surface. Upon anode etching, silicon substrate with porous layer is rinsed in deionized water, then subjected to anode oxidation in hydrochloric acid solution, and rinsed again in deionized water; epitaxy is conducted using both elementary semiconductors and semiconductor compounds. Highly doped single-crystalline p- type silicon of commercial quality is used for substrate manufacture. EFFECT: improved resistance of porous layer, reduced high-purity silicon requirement, provision for manufacturing epitaxial film from both elementary semiconductors and semiconductor compounds. 2 cl, 11 dwgg</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1998</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD3dQ3x8HdRcPMPUggI8ncJdfb0c1cIdvX1dPb3A_JC_IN0_f10A_yD_EODdRWCPX1AEgrBIUFAudAgVx4G1rTEnOJUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEh8UamRoZGxkaOFsaEyEEgBrwyqc</recordid><startdate>19981210</startdate><enddate>19981210</enddate><creator>SOKOLOV L.V</creator><creator>ROMANOV S.I</creator><creator>MASHANOV V.I</creator><creator>KIRIENKO V.V</creator><creator>LAMIN M.A</creator><scope>EVB</scope></search><sort><creationdate>19981210</creationdate><title>METHOD FOR PRODUCING SEMICONDUCTOR-ON-POROUS- SILICON STRUCTURE</title><author>SOKOLOV L.V ; ROMANOV S.I ; MASHANOV V.I ; KIRIENKO V.V ; LAMIN M.A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_RU2123218C13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1998</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SOKOLOV L.V</creatorcontrib><creatorcontrib>ROMANOV S.I</creatorcontrib><creatorcontrib>MASHANOV V.I</creatorcontrib><creatorcontrib>KIRIENKO V.V</creatorcontrib><creatorcontrib>LAMIN M.A</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SOKOLOV L.V</au><au>ROMANOV S.I</au><au>MASHANOV V.I</au><au>KIRIENKO V.V</au><au>LAMIN M.A</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR PRODUCING SEMICONDUCTOR-ON-POROUS- SILICON STRUCTURE</title><date>1998-12-10</date><risdate>1998</risdate><abstract>FIELD: microelectronics; manufacture of high-speed digital and analog-to- digital integrated circuits on insulating substrates. SUBSTANCE: method involves anode etching of highly doped single-crystalline p- type silicon substrate in hydrofluoric acid solution, drying out in oxygen environment, removal of silicon oxide from porous layer surface by molecular silicon stream, and semiconductor epitaxy on porous layer surface. Upon anode etching, silicon substrate with porous layer is rinsed in deionized water, then subjected to anode oxidation in hydrochloric acid solution, and rinsed again in deionized water; epitaxy is conducted using both elementary semiconductors and semiconductor compounds. Highly doped single-crystalline p- type silicon of commercial quality is used for substrate manufacture. EFFECT: improved resistance of porous layer, reduced high-purity silicon requirement, provision for manufacturing epitaxial film from both elementary semiconductors and semiconductor compounds. 2 cl, 11 dwgg</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_RU2123218C1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD FOR PRODUCING SEMICONDUCTOR-ON-POROUS- SILICON STRUCTURE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T13%3A51%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SOKOLOV%20L.V&rft.date=1998-12-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ERU2123218C1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |