PROCEDE ET INSTALLATION D'OBTENTION DU CARBURE DE SILICIUM

An electrical resistance furnace installation, especially for the production of silicon carbide, has no side walls. In the one arrangement, the installation has two end walls, each provided with an electrode, with the resistive core for heating reacting valves extending between the electrodes at the...

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Bibliographische Detailangaben
Hauptverfasser: WIEBKE,GUENTER,DE, KORSTEN,ANDREAS,DE, KORNDOERFER,EUGEN,DE, KORNDOERFER,LUDWIG,DE, BENECKE,THEODOR,DE, PETERSEN,FRITZ,DE
Format: Patent
Sprache:fre
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Zusammenfassung:An electrical resistance furnace installation, especially for the production of silicon carbide, has no side walls. In the one arrangement, the installation has two end walls, each provided with an electrode, with the resistive core for heating reacting valves extending between the electrodes at the end wall. In another arrangement, the installation has only one end wall, with the resistive core extending between an electrode in the one end wall, and a connection to a further electrode arranged in the bottom of the furnace. In a still further arrangement, the furnace has neither end walls nor side walls, and the resistive core is horizontally supported above the furnace floor and electrically connected through electrodes in the bottom of the furnace. The reacting ballast, in each embodiment, is poured onto the furnace floor to surround the resistive core for heating of the ballast.