IMPEDANCE ADAPTED MICROWAVE ENERGY COUPLING DEVICE
A device for coupling microwave energy into a treatment chamber (3) which is arranged in a hollow body (2), whereby said treatment chamber is a plasma CVD coating chamber for coating the inner wall of a hollow body (2). The inventive device comprises a microwave source, a microwave coupling device (...
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creator | RODNEY MOORE HANNO KAESS WOLF ESSERS |
description | A device for coupling microwave energy into a treatment chamber (3) which is arranged in a hollow body (2), whereby said treatment chamber is a plasma CVD coating chamber for coating the inner wall of a hollow body (2). The inventive device comprises a microwave source, a microwave coupling device (10) and a microwave conductor (1,9). A gas supply tube (13) can be inserted into said hollow body (2) in such a way that a process gas can be activated into a plasma state by the coupled microwave energy. In order to treat hollow bodies (2) of different shapes and sizes without the need for substantial re-fitting each time, the gas supply tube (13) which is provided with the electrically conductive material extends into the wave guide from a first side in the form of an inner conductor of a coaxial wave guide (1 in region b) and the microwave coupling device (10) is arranged on the second side opposite, and an additional, electroconductive hollow conductor insert (12) in the form of a substantially hollow sleeve is disposed in the coaxial waveguide, coaxially surrounding the gas supply tube (13) at a distance therefrom. |
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The inventive device comprises a microwave source, a microwave coupling device (10) and a microwave conductor (1,9). A gas supply tube (13) can be inserted into said hollow body (2) in such a way that a process gas can be activated into a plasma state by the coupled microwave energy. In order to treat hollow bodies (2) of different shapes and sizes without the need for substantial re-fitting each time, the gas supply tube (13) which is provided with the electrically conductive material extends into the wave guide from a first side in the form of an inner conductor of a coaxial wave guide (1 in region b) and the microwave coupling device (10) is arranged on the second side opposite, and an additional, electroconductive hollow conductor insert (12) in the form of a substantially hollow sleeve is disposed in the coaxial waveguide, coaxially surrounding the gas supply tube (13) at a distance therefrom.</description><language>eng ; por</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20071211&DB=EPODOC&CC=PT&NR=1252647E$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20071211&DB=EPODOC&CC=PT&NR=1252647E$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RODNEY MOORE</creatorcontrib><creatorcontrib>HANNO KAESS</creatorcontrib><creatorcontrib>WOLF ESSERS</creatorcontrib><title>IMPEDANCE ADAPTED MICROWAVE ENERGY COUPLING DEVICE</title><description>A device for coupling microwave energy into a treatment chamber (3) which is arranged in a hollow body (2), whereby said treatment chamber is a plasma CVD coating chamber for coating the inner wall of a hollow body (2). The inventive device comprises a microwave source, a microwave coupling device (10) and a microwave conductor (1,9). A gas supply tube (13) can be inserted into said hollow body (2) in such a way that a process gas can be activated into a plasma state by the coupled microwave energy. In order to treat hollow bodies (2) of different shapes and sizes without the need for substantial re-fitting each time, the gas supply tube (13) which is provided with the electrically conductive material extends into the wave guide from a first side in the form of an inner conductor of a coaxial wave guide (1 in region b) and the microwave coupling device (10) is arranged on the second side opposite, and an additional, electroconductive hollow conductor insert (12) in the form of a substantially hollow sleeve is disposed in the coaxial waveguide, coaxially surrounding the gas supply tube (13) at a distance therefrom.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDy9A1wdXH0c3ZVcHRxDAhxdVHw9XQO8g93DHNVcPVzDXKPVHD2Dw3w8fRzV3BxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfEBIYZGpkZmJuaursZEKAEAKz8mpg</recordid><startdate>20071211</startdate><enddate>20071211</enddate><creator>RODNEY MOORE</creator><creator>HANNO KAESS</creator><creator>WOLF ESSERS</creator><scope>EVB</scope></search><sort><creationdate>20071211</creationdate><title>IMPEDANCE ADAPTED MICROWAVE ENERGY COUPLING DEVICE</title><author>RODNEY MOORE ; HANNO KAESS ; WOLF ESSERS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_PT1252647EE3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; por</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>RODNEY MOORE</creatorcontrib><creatorcontrib>HANNO KAESS</creatorcontrib><creatorcontrib>WOLF ESSERS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RODNEY MOORE</au><au>HANNO KAESS</au><au>WOLF ESSERS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IMPEDANCE ADAPTED MICROWAVE ENERGY COUPLING DEVICE</title><date>2007-12-11</date><risdate>2007</risdate><abstract>A device for coupling microwave energy into a treatment chamber (3) which is arranged in a hollow body (2), whereby said treatment chamber is a plasma CVD coating chamber for coating the inner wall of a hollow body (2). The inventive device comprises a microwave source, a microwave coupling device (10) and a microwave conductor (1,9). A gas supply tube (13) can be inserted into said hollow body (2) in such a way that a process gas can be activated into a plasma state by the coupled microwave energy. In order to treat hollow bodies (2) of different shapes and sizes without the need for substantial re-fitting each time, the gas supply tube (13) which is provided with the electrically conductive material extends into the wave guide from a first side in the form of an inner conductor of a coaxial wave guide (1 in region b) and the microwave coupling device (10) is arranged on the second side opposite, and an additional, electroconductive hollow conductor insert (12) in the form of a substantially hollow sleeve is disposed in the coaxial waveguide, coaxially surrounding the gas supply tube (13) at a distance therefrom.</abstract><oa>free_for_read</oa></addata></record> |
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language | eng ; por |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | IMPEDANCE ADAPTED MICROWAVE ENERGY COUPLING DEVICE |
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