BULK MONO-CRYSTALLINE GALLIUM NITRIDE AND METHOD FOR ITS PREPARATION
Bulk mono-crystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 104/cm2 and conside...
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Patent |
Sprache: | eng ; pol |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | KUCHARSKI, ROBERT DORADZINSKI, ROMAN GARCZYNSKI, JERZY DWILINSKI, ROBERT SIERZPUTOWSKI, LESZEK KANBARA, YASUO |
description | Bulk mono-crystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 104/cm2 and considerably lower compared to the dislocation density of the seed, and having a large curvature radius of the crystalline lattice, preferably longer than 15 m, more preferably longer than 30 m, and most preferably of about 70 m, considerably longer than the curvature radius of the crystalline lattice of the seed. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_PL1769105TT3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>PL1769105TT3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_PL1769105TT33</originalsourceid><addsrcrecordid>eNrjZHBxCvXxVvD19_PXdQ6KDA5x9PHx9HNVcAfRob4Kfp4hQZ4urgqOfi4Kvq4hHv4uCm7-QQqeIcEKAUGuAY5BjiGe_n48DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSQ-wMfQ3MzS0MA0JMTYmBg1AG4xLFc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>BULK MONO-CRYSTALLINE GALLIUM NITRIDE AND METHOD FOR ITS PREPARATION</title><source>esp@cenet</source><creator>KUCHARSKI, ROBERT ; DORADZINSKI, ROMAN ; GARCZYNSKI, JERZY ; DWILINSKI, ROBERT ; SIERZPUTOWSKI, LESZEK ; KANBARA, YASUO</creator><creatorcontrib>KUCHARSKI, ROBERT ; DORADZINSKI, ROMAN ; GARCZYNSKI, JERZY ; DWILINSKI, ROBERT ; SIERZPUTOWSKI, LESZEK ; KANBARA, YASUO</creatorcontrib><description>Bulk mono-crystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 104/cm2 and considerably lower compared to the dislocation density of the seed, and having a large curvature radius of the crystalline lattice, preferably longer than 15 m, more preferably longer than 30 m, and most preferably of about 70 m, considerably longer than the curvature radius of the crystalline lattice of the seed.</description><language>eng ; pol</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141128&DB=EPODOC&CC=PL&NR=1769105T3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20141128&DB=EPODOC&CC=PL&NR=1769105T3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUCHARSKI, ROBERT</creatorcontrib><creatorcontrib>DORADZINSKI, ROMAN</creatorcontrib><creatorcontrib>GARCZYNSKI, JERZY</creatorcontrib><creatorcontrib>DWILINSKI, ROBERT</creatorcontrib><creatorcontrib>SIERZPUTOWSKI, LESZEK</creatorcontrib><creatorcontrib>KANBARA, YASUO</creatorcontrib><title>BULK MONO-CRYSTALLINE GALLIUM NITRIDE AND METHOD FOR ITS PREPARATION</title><description>Bulk mono-crystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 104/cm2 and considerably lower compared to the dislocation density of the seed, and having a large curvature radius of the crystalline lattice, preferably longer than 15 m, more preferably longer than 30 m, and most preferably of about 70 m, considerably longer than the curvature radius of the crystalline lattice of the seed.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBxCvXxVvD19_PXdQ6KDA5x9PHx9HNVcAfRob4Kfp4hQZ4urgqOfi4Kvq4hHv4uCm7-QQqeIcEKAUGuAY5BjiGe_n48DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSQ-wMfQ3MzS0MA0JMTYmBg1AG4xLFc</recordid><startdate>20141128</startdate><enddate>20141128</enddate><creator>KUCHARSKI, ROBERT</creator><creator>DORADZINSKI, ROMAN</creator><creator>GARCZYNSKI, JERZY</creator><creator>DWILINSKI, ROBERT</creator><creator>SIERZPUTOWSKI, LESZEK</creator><creator>KANBARA, YASUO</creator><scope>EVB</scope></search><sort><creationdate>20141128</creationdate><title>BULK MONO-CRYSTALLINE GALLIUM NITRIDE AND METHOD FOR ITS PREPARATION</title><author>KUCHARSKI, ROBERT ; DORADZINSKI, ROMAN ; GARCZYNSKI, JERZY ; DWILINSKI, ROBERT ; SIERZPUTOWSKI, LESZEK ; KANBARA, YASUO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_PL1769105TT33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; pol</language><creationdate>2014</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>KUCHARSKI, ROBERT</creatorcontrib><creatorcontrib>DORADZINSKI, ROMAN</creatorcontrib><creatorcontrib>GARCZYNSKI, JERZY</creatorcontrib><creatorcontrib>DWILINSKI, ROBERT</creatorcontrib><creatorcontrib>SIERZPUTOWSKI, LESZEK</creatorcontrib><creatorcontrib>KANBARA, YASUO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KUCHARSKI, ROBERT</au><au>DORADZINSKI, ROMAN</au><au>GARCZYNSKI, JERZY</au><au>DWILINSKI, ROBERT</au><au>SIERZPUTOWSKI, LESZEK</au><au>KANBARA, YASUO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BULK MONO-CRYSTALLINE GALLIUM NITRIDE AND METHOD FOR ITS PREPARATION</title><date>2014-11-28</date><risdate>2014</risdate><abstract>Bulk mono-crystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 104/cm2 and considerably lower compared to the dislocation density of the seed, and having a large curvature radius of the crystalline lattice, preferably longer than 15 m, more preferably longer than 30 m, and most preferably of about 70 m, considerably longer than the curvature radius of the crystalline lattice of the seed.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng ; pol |
recordid | cdi_epo_espacenet_PL1769105TT3 |
source | esp@cenet |
subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
title | BULK MONO-CRYSTALLINE GALLIUM NITRIDE AND METHOD FOR ITS PREPARATION |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T20%3A35%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KUCHARSKI,%20ROBERT&rft.date=2014-11-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EPL1769105TT3%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |