BULK MONO-CRYSTALLINE GALLIUM NITRIDE AND METHOD FOR ITS PREPARATION

Bulk mono-crystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 104/cm2 and conside...

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Hauptverfasser: KUCHARSKI, ROBERT, DORADZINSKI, ROMAN, GARCZYNSKI, JERZY, DWILINSKI, ROBERT, SIERZPUTOWSKI, LESZEK, KANBARA, YASUO
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creator KUCHARSKI, ROBERT
DORADZINSKI, ROMAN
GARCZYNSKI, JERZY
DWILINSKI, ROBERT
SIERZPUTOWSKI, LESZEK
KANBARA, YASUO
description Bulk mono-crystalline gallium-containing nitride, grown on the seed at least in the direction essentially perpendicular to the direction of the seed growth, essentially without propagation of crystalline defects as present in the seed, having the dislocation density not exceeding 104/cm2 and considerably lower compared to the dislocation density of the seed, and having a large curvature radius of the crystalline lattice, preferably longer than 15 m, more preferably longer than 30 m, and most preferably of about 70 m, considerably longer than the curvature radius of the crystalline lattice of the seed.
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subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title BULK MONO-CRYSTALLINE GALLIUM NITRIDE AND METHOD FOR ITS PREPARATION
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