Silicon with structured oxygen doping, its production and use
Silicon and a process for producing silicon having a total oxygen content of 8x1017 atoms/cm3 to 1x1019 atoms/cm3 and a dislocation density of 1x105 cm-2 to 5x107 cm-2. The silicon has at least 25% of the oxygen contained in the form of silicon/oxygen precipitations that are concentrated in the area...
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| creator | THURM, SIEGFRIED BREITENSTEIN, OTWIN HOFS, HANS-ULRICH HABLER, CHRISTIAN KOCH, WOLFGANG |
| description | Silicon and a process for producing silicon having a total oxygen content of 8x1017 atoms/cm3 to 1x1019 atoms/cm3 and a dislocation density of 1x105 cm-2 to 5x107 cm-2. The silicon has at least 25% of the oxygen contained in the form of silicon/oxygen precipitations that are concentrated in the area of the grain boundaries and dislocations. The process involves molten silicon being in contact with silicon monoxide and/or silicon dioxide therefore becoming saturated with oxygen, and/or the molten silicon is treated with an oxygen-containing gas before or during the crystallization. The dislocation density is set by means of the cooling rate of the silicon. The silicon finds use in film-casting or film drawing processes and in photovoltaics. |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Silicon with structured oxygen doping, its production and use |
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