Silicon with structured oxygen doping, its production and use

Silicon with structured oxygen doping, its production and use

Silicon and a process for producing silicon having a total oxygen content of 8x1017 atoms/cm3 to 1x1019 atoms/cm3 and a dislocation density of 1x105 cm-2 to 5x107 cm-2. The silicon has at least 25% of the oxygen contained in the form of silicon/oxygen precipitations that are concentrated in the area...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: THURM, SIEGFRIED, BREITENSTEIN, OTWIN, HOFS, HANS-ULRICH, HABLER, CHRISTIAN, KOCH, WOLFGANG
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Silicon and a process for producing silicon having a total oxygen content of 8x1017 atoms/cm3 to 1x1019 atoms/cm3 and a dislocation density of 1x105 cm-2 to 5x107 cm-2. The silicon has at least 25% of the oxygen contained in the form of silicon/oxygen precipitations that are concentrated in the area of the grain boundaries and dislocations. The process involves molten silicon being in contact with silicon monoxide and/or silicon dioxide therefore becoming saturated with oxygen, and/or the molten silicon is treated with an oxygen-containing gas before or during the crystallization. The dislocation density is set by means of the cooling rate of the silicon. The silicon finds use in film-casting or film drawing processes and in photovoltaics.