METHOD AND STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT

METHOD AND STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT

The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline sil...

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Hauptverfasser: CHEN CHIAN, KAO TZU-WEI, HSU CHIA-HAO, FU TZUNGI, LIN YUAO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHEN CHIAN
KAO TZU-WEI
HSU CHIA-HAO
FU TZUNGI
LIN YUAO
description The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_NL2010419A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>NL2010419A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_NL2010419A3</originalsourceid><addsrcrecordid>eNqFyr0KwjAQAOAuDqI-g_cCQqsujuFyMcH8yPWiLlKKxEm0UN8fHdydvuWbVtdAYpMGFTW0whklM4FJDHQRpkCQvbA6ueRJgDyhcGpFiUNAm_EAZycWmHRG0oBehaOLeyBjvnVeTe79YyyLn7NqaUjQrsrw6so49LfyLO8u-nXd1Ntmpzb_xwdQcjIJ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD AND STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT</title><source>esp@cenet</source><creator>CHEN CHIAN ; KAO TZU-WEI ; HSU CHIA-HAO ; FU TZUNGI ; LIN YUAO</creator><creatorcontrib>CHEN CHIAN ; KAO TZU-WEI ; HSU CHIA-HAO ; FU TZUNGI ; LIN YUAO</creatorcontrib><description>The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140305&amp;DB=EPODOC&amp;CC=NL&amp;NR=2010419A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140305&amp;DB=EPODOC&amp;CC=NL&amp;NR=2010419A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN CHIAN</creatorcontrib><creatorcontrib>KAO TZU-WEI</creatorcontrib><creatorcontrib>HSU CHIA-HAO</creatorcontrib><creatorcontrib>FU TZUNGI</creatorcontrib><creatorcontrib>LIN YUAO</creatorcontrib><title>METHOD AND STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT</title><description>The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFyr0KwjAQAOAuDqI-g_cCQqsujuFyMcH8yPWiLlKKxEm0UN8fHdydvuWbVtdAYpMGFTW0whklM4FJDHQRpkCQvbA6ueRJgDyhcGpFiUNAm_EAZycWmHRG0oBehaOLeyBjvnVeTe79YyyLn7NqaUjQrsrw6so49LfyLO8u-nXd1Ntmpzb_xwdQcjIJ</recordid><startdate>20140305</startdate><enddate>20140305</enddate><creator>CHEN CHIAN</creator><creator>KAO TZU-WEI</creator><creator>HSU CHIA-HAO</creator><creator>FU TZUNGI</creator><creator>LIN YUAO</creator><scope>EVB</scope></search><sort><creationdate>20140305</creationdate><title>METHOD AND STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT</title><author>CHEN CHIAN ; KAO TZU-WEI ; HSU CHIA-HAO ; FU TZUNGI ; LIN YUAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_NL2010419A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN CHIAN</creatorcontrib><creatorcontrib>KAO TZU-WEI</creatorcontrib><creatorcontrib>HSU CHIA-HAO</creatorcontrib><creatorcontrib>FU TZUNGI</creatorcontrib><creatorcontrib>LIN YUAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN CHIAN</au><au>KAO TZU-WEI</au><au>HSU CHIA-HAO</au><au>FU TZUNGI</au><au>LIN YUAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT</title><date>2014-03-05</date><risdate>2014</risdate><abstract>The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD AND STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T07%3A17%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHEN%20CHIAN&rft.date=2014-03-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ENL2010419A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true