METHOD FOR PRODUCING A NON-POLAR A-PLANE GALLIUM NITRIDE (GAN) THIN FILM ON AN R-PLANE SAPPHIRE SUBSTRATE

METHOD FOR PRODUCING A NON-POLAR A-PLANE GALLIUM NITRIDE (GAN) THIN FILM ON AN R-PLANE SAPPHIRE SUBSTRATE

The present invention is a method for producing a non-polar a-plane GaN thin film on an r-plane sapphire substrate using metal organic chemical vapour deposition (MOCVD) technique. Particularly, the method provides suitable growth conditions for GaN layer during MOCVD by controlling V/III ratio, rea...

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Hauptverfasser: Mohd Adreen Shah bin Azman Shah, Ahmad Shuhaimi bin Abu Bakar, Anas bin Kamarundzaman, Omar Ayad Fadhil Al-Zuhairi
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Mohd Adreen Shah bin Azman Shah
Ahmad Shuhaimi bin Abu Bakar
Anas bin Kamarundzaman
Omar Ayad Fadhil Al-Zuhairi
description The present invention is a method for producing a non-polar a-plane GaN thin film on an r-plane sapphire substrate using metal organic chemical vapour deposition (MOCVD) technique. Particularly, the method provides suitable growth conditions for GaN layer during MOCVD by controlling V/III ratio, reaction temperature and flow rate of reactants, but not limited thereto. It was found that such method could provide non-polar a-plane GaN thin film on r-plane sapphire substrate with reduced lattice mismatch between each layer. (Most illustrative figure: Fig. 4.)
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR PRODUCING A NON-POLAR A-PLANE GALLIUM NITRIDE (GAN) THIN FILM ON AN R-PLANE SAPPHIRE SUBSTRATE
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