ETCHANT SOLUTIONS AND METHOD OF USE THEREOF

ETCHANT SOLUTIONS AND METHOD OF USE THEREOF

Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH40H; and water; or etching compositions comprising one or more than one inorganic alkali basic h...

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Hauptverfasser: TIANNIU CHEN, WILLIAM JACK CASTEEL, JR, GENE EVERAD PARRIS
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creator TIANNIU CHEN
WILLIAM JACK CASTEEL, JR
GENE EVERAD PARRIS
description Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH40H; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate. Figure 3
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