WAFER PROCESSING METHOD

A wafer (31) formed from an SiC substrate having a first surface (11a) and a second surface is divided into individual device chips. A division start point formed by a cutting blade (64) has a depth corresponding to the finished thickness of each device chip along division lines (33) formed on the first surface (11a). A separation start point is formed by a laser beam having a focal point set inside the SiC substrate at a predetermined depth from the second surface, and the laser beam is applied to the second surface while relatively moving the focal point and the SiC substrate to thereby form a modified layer (43) parallel to the first surface (11a) and cracks (45) extending from the modified layer (43) along a c-plane (21). An external force is applied to the wafer (31), thereby separating the wafer (31) into a first wafer (31A) having the first surface (11a) and a second wafer (31B) having the second surface.