PHOTOVOLTAIC DEVICES

A photovoltaic device (100, 200) is presented. The photovoltaic device (100, 200) includes a layer stack (110, 210); and an absorber layer (120, 220) is disposed on the layer stack (110, 210). The absorber layer (120, 220) includes cadmium, tellurium, and selenium. A semiconductor layer (130, 230) i...

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Hauptverfasser:	DUGGAL, Anil, Raj, SHIANG, Joseph, John, HALVERSON, Adam, Fraser, HUBER, William, Hullinger
Format:	Patent
Sprache:	eng
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creator	DUGGAL, Anil, Raj SHIANG, Joseph, John HALVERSON, Adam, Fraser HUBER, William, Hullinger
description	A photovoltaic device (100, 200) is presented. The photovoltaic device (100, 200) includes a layer stack (110, 210); and an absorber layer (120, 220) is disposed on the layer stack (110, 210). The absorber layer (120, 220) includes cadmium, tellurium, and selenium. A semiconductor layer (130, 230) is further disposed on the absorber layer (120, 220), wherein a valence band offset between the semiconductor layer (130, 230) and the absorber layer (120, 220) is less than about 1.3 electron Volts, and a band gap of the semiconductor layer (130, 230) is in a range from about 1.2 electron Volts to about 3.5 electron Volts. The most suitable drawing: FIG. 1.
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The photovoltaic device (100, 200) includes a layer stack (110, 210); and an absorber layer (120, 220) is disposed on the layer stack (110, 210). The absorber layer (120, 220) includes cadmium, tellurium, and selenium. A semiconductor layer (130, 230) is further disposed on the absorber layer (120, 220), wherein a valence band offset between the semiconductor layer (130, 230) and the absorber layer (120, 220) is less than about 1.3 electron Volts, and a band gap of the semiconductor layer (130, 230) is in a range from about 1.2 electron Volts to about 3.5 electron Volts. 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The photovoltaic device (100, 200) includes a layer stack (110, 210); and an absorber layer (120, 220) is disposed on the layer stack (110, 210). The absorber layer (120, 220) includes cadmium, tellurium, and selenium. A semiconductor layer (130, 230) is further disposed on the absorber layer (120, 220), wherein a valence band offset between the semiconductor layer (130, 230) and the absorber layer (120, 220) is less than about 1.3 electron Volts, and a band gap of the semiconductor layer (130, 230) is in a range from about 1.2 electron Volts to about 3.5 electron Volts. The most suitable drawing: FIG. 1.</abstract><oa>free_for_read</oa></addata></record>
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title	PHOTOVOLTAIC DEVICES
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