METHOD AND APPARATUS FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER
METHOD AND APPARATUS FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER HAVING AN UPPER A LOWER COVER THE METHOD COMPRISES MEASURING THE TEMPERATURE ON THE FRONT SIDE OF THE SEMICONDUCTOR WATER; HEATING THE SEMICONDUCTOR WATER TO A DEPOSITION TEMPERATURE; CONTRO...
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| creator | GEORG BRENNINGER |
| description | METHOD AND APPARATUS FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER HAVING AN UPPER A LOWER COVER THE METHOD COMPRISES MEASURING THE TEMPERATURE ON THE FRONT SIDE OF THE SEMICONDUCTOR WATER; HEATING THE SEMICONDUCTOR WATER TO A DEPOSITION TEMPERATURE; CONTROLLING THE TEMPERATURE OF THE UPPER COVER OF THE PROCESS CHAMBER TO A TARGET TEMPERATURE, WHEREIN THE TEMPERATURE OF THE UPPER COVER IS MEASURED IN THE CENTER OF THE OUTER SURFACE OF THE UPPER COVER AND IS USED AS AN ACTUAL VALUE OF THE CONTROLLED VARIABLE OF A CONTROL LOOP FOR CONTROLLING THE TEMPERATURE OF THE UPPER COVER; SETTING A GAS FLOW RATE WITH WHICH A PROCESS GAS FOR DEPOSITING THE LAYER IS CONDUCTED THROUGH THE PROCESS CHAMBER; AND DEPOSITING THE LAYER ON THE FRONT SIDE OF THE SEMICONDUCTOR WAFER HEATED TO THE DEPOSITION TEMPERATURE DURING THE CONTROL OF THE TEMPERATURE OF THE UPPER COVER OF THE PROCESS CHAMBER TO THE TARGET TEMPERATURE. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_MY166009A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>MY166009A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_MY166009A3</originalsourceid><addsrcrecordid>eNrjZMj1dQ3x8HdRcPQD4oAAxyDHkNBgBTf_IAUX1wD_YM8QTz93BUcFH8dI1yAFfz8gM9jV19PZ388l1DkEqCrc0Q0o4RSpEOYYgKQJqNITpDggyN_ZNThYwdnD0dfJNYiHgTUtMac4lRdKczPIubmGOHvophbkx6cWFyQmp-allsT7RhqamRkYWDoaE1QAALztNYA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD AND APPARATUS FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER</title><source>esp@cenet</source><creator>GEORG BRENNINGER</creator><creatorcontrib>GEORG BRENNINGER</creatorcontrib><description>METHOD AND APPARATUS FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER HAVING AN UPPER A LOWER COVER THE METHOD COMPRISES MEASURING THE TEMPERATURE ON THE FRONT SIDE OF THE SEMICONDUCTOR WATER; HEATING THE SEMICONDUCTOR WATER TO A DEPOSITION TEMPERATURE; CONTROLLING THE TEMPERATURE OF THE UPPER COVER OF THE PROCESS CHAMBER TO A TARGET TEMPERATURE, WHEREIN THE TEMPERATURE OF THE UPPER COVER IS MEASURED IN THE CENTER OF THE OUTER SURFACE OF THE UPPER COVER AND IS USED AS AN ACTUAL VALUE OF THE CONTROLLED VARIABLE OF A CONTROL LOOP FOR CONTROLLING THE TEMPERATURE OF THE UPPER COVER; SETTING A GAS FLOW RATE WITH WHICH A PROCESS GAS FOR DEPOSITING THE LAYER IS CONDUCTED THROUGH THE PROCESS CHAMBER; AND DEPOSITING THE LAYER ON THE FRONT SIDE OF THE SEMICONDUCTOR WAFER HEATED TO THE DEPOSITION TEMPERATURE DURING THE CONTROL OF THE TEMPERATURE OF THE UPPER COVER OF THE PROCESS CHAMBER TO THE TARGET TEMPERATURE.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GLASS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES ; METALLURGY ; MINERAL OR SLAG WOOL ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180521&DB=EPODOC&CC=MY&NR=166009A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180521&DB=EPODOC&CC=MY&NR=166009A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GEORG BRENNINGER</creatorcontrib><title>METHOD AND APPARATUS FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER</title><description>METHOD AND APPARATUS FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER HAVING AN UPPER A LOWER COVER THE METHOD COMPRISES MEASURING THE TEMPERATURE ON THE FRONT SIDE OF THE SEMICONDUCTOR WATER; HEATING THE SEMICONDUCTOR WATER TO A DEPOSITION TEMPERATURE; CONTROLLING THE TEMPERATURE OF THE UPPER COVER OF THE PROCESS CHAMBER TO A TARGET TEMPERATURE, WHEREIN THE TEMPERATURE OF THE UPPER COVER IS MEASURED IN THE CENTER OF THE OUTER SURFACE OF THE UPPER COVER AND IS USED AS AN ACTUAL VALUE OF THE CONTROLLED VARIABLE OF A CONTROL LOOP FOR CONTROLLING THE TEMPERATURE OF THE UPPER COVER; SETTING A GAS FLOW RATE WITH WHICH A PROCESS GAS FOR DEPOSITING THE LAYER IS CONDUCTED THROUGH THE PROCESS CHAMBER; AND DEPOSITING THE LAYER ON THE FRONT SIDE OF THE SEMICONDUCTOR WAFER HEATED TO THE DEPOSITION TEMPERATURE DURING THE CONTROL OF THE TEMPERATURE OF THE UPPER COVER OF THE PROCESS CHAMBER TO THE TARGET TEMPERATURE.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GLASS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZMj1dQ3x8HdRcPQD4oAAxyDHkNBgBTf_IAUX1wD_YM8QTz93BUcFH8dI1yAFfz8gM9jV19PZ388l1DkEqCrc0Q0o4RSpEOYYgKQJqNITpDggyN_ZNThYwdnD0dfJNYiHgTUtMac4lRdKczPIubmGOHvophbkx6cWFyQmp-allsT7RhqamRkYWDoaE1QAALztNYA</recordid><startdate>20180521</startdate><enddate>20180521</enddate><creator>GEORG BRENNINGER</creator><scope>EVB</scope></search><sort><creationdate>20180521</creationdate><title>METHOD AND APPARATUS FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER</title><author>GEORG BRENNINGER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_MY166009A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GLASS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>GEORG BRENNINGER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GEORG BRENNINGER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND APPARATUS FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER</title><date>2018-05-21</date><risdate>2018</risdate><abstract>METHOD AND APPARATUS FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER HAVING AN UPPER A LOWER COVER THE METHOD COMPRISES MEASURING THE TEMPERATURE ON THE FRONT SIDE OF THE SEMICONDUCTOR WATER; HEATING THE SEMICONDUCTOR WATER TO A DEPOSITION TEMPERATURE; CONTROLLING THE TEMPERATURE OF THE UPPER COVER OF THE PROCESS CHAMBER TO A TARGET TEMPERATURE, WHEREIN THE TEMPERATURE OF THE UPPER COVER IS MEASURED IN THE CENTER OF THE OUTER SURFACE OF THE UPPER COVER AND IS USED AS AN ACTUAL VALUE OF THE CONTROLLED VARIABLE OF A CONTROL LOOP FOR CONTROLLING THE TEMPERATURE OF THE UPPER COVER; SETTING A GAS FLOW RATE WITH WHICH A PROCESS GAS FOR DEPOSITING THE LAYER IS CONDUCTED THROUGH THE PROCESS CHAMBER; AND DEPOSITING THE LAYER ON THE FRONT SIDE OF THE SEMICONDUCTOR WAFER HEATED TO THE DEPOSITION TEMPERATURE DURING THE CONTROL OF THE TEMPERATURE OF THE UPPER COVER OF THE PROCESS CHAMBER TO THE TARGET TEMPERATURE.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES METALLURGY MINERAL OR SLAG WOOL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD AND APPARATUS FOR DEPOSITING A LAYER ON A SEMICONDUCTOR WAFER BY VAPOR DEPOSITION IN A PROCESS CHAMBER |
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