VIBRATORY SENSOR
VIBRATORY SENSOR 5 A CAPACITOR COMPRISES A DIELECTRIC BASE LAYER (4A) DEFINED BY TOP, FIRST AND SIDE SURFACES; A PLURALITY OF FIRST DRIVEN ELECTRODE (I 5) HAVING TIPS AND EDGES DEPOSITED ON THE TOP SURFACE OF THE DIELECTRIC BASE LAYER (4A) THAT EACH ARE SPACED APART AT THE EDGES BY A PREDETENNINED G...
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| creator | AZLAN ZAKARIA DZUZLINDAH MUHAMAD ALIAS SURAYA SULAIMAN AZRIF MANUT AGUS SANTOSO TAMSIR |
| description | VIBRATORY SENSOR 5 A CAPACITOR COMPRISES A DIELECTRIC BASE LAYER (4A) DEFINED BY TOP, FIRST AND SIDE SURFACES; A PLURALITY OF FIRST DRIVEN ELECTRODE (I 5) HAVING TIPS AND EDGES DEPOSITED ON THE TOP SURFACE OF THE DIELECTRIC BASE LAYER (4A) THAT EACH ARE SPACED APART AT THE EDGES BY A PREDETENNINED GAP; A PLURALITY OF FIRST SENSING ELECTRODE (16) HAVING TIPS AND EDGES THAT EACH OF THE FIRST SENSING ELECTRODE (16) IS DEPOSITED AT EACH OF THE 10 PREDETEN-NINED GAP IN BETWEEN TWO FIRST DRIVEN ELECTRODES (15) WITH A PREDETERMINED DISTANCE IN BETWEEN THE FIRST SENSING (16) AND FIRST DRIVEN ELECTRODES (15); A PLURALITY PAIR OF PROTRUSION (20) EXTENDS UPWARD FROM THE TOP SURFACE OF THE DIELECTRIC BASE LAYER (4A) AT THE TIPS OF THE FIRST DRIVEN ELECTRODES (I 5) AND THE FIRST SENSING ELECTRODES (I 6); A SECOND DRIVEN ELECTRODE (IO) OR A SECOND SENSING ELECTRODE (II) ARE POSITIONED 1 5 OVERHEAD OF EACH FIRST DRIVEN ELECTRODE (15) AND FIRST SENSING ELECTRODE (16) RESPECTIVELY BY ANCHORING ONTO THE CORRESPONDING PAIR OF PROTRUSIONS (20) WITH A VOID LEFT BETWEEN EACH SECOND AND FIRST ELECTRODES.- WHEREBY THE SECOND DRIVEN (10) AND SECOND SENSING (I 1) ELECTRODES VIBRATE UP AND DOWN BY APPLYING A BIAS VOLTAGE ONTO THE FIRST DRIVEN (I 5) AND FIRST SENSING (I 6) ELECTRODES THUS ABLE TO MANIPULATE 20 PENETRATION DEPTH OF QUASI-STATIC ELECTRIC FIELD LINES PRODUCED FROM THE SECOND DRIVEN (I 0) AND SECOND SENSING ELECTRODES (I 1) INTO A MATERIAL UNDER TEST. (MOST ILLUSTRATED BY |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_MY145205A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>MY145205A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_MY145205A3</originalsourceid><addsrcrecordid>eNrjZBAI83QKcgzxD4pUCHb1C_YP4mFgTUvMKU7lhdLcDHJuriHOHrqpBfnxqcUFicmpeakl8b6RhiamRgamjsYEFQAAc3kcmQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>VIBRATORY SENSOR</title><source>esp@cenet</source><creator>AZLAN ZAKARIA ; DZUZLINDAH MUHAMAD ALIAS ; SURAYA SULAIMAN ; AZRIF MANUT ; AGUS SANTOSO TAMSIR</creator><creatorcontrib>AZLAN ZAKARIA ; DZUZLINDAH MUHAMAD ALIAS ; SURAYA SULAIMAN ; AZRIF MANUT ; AGUS SANTOSO TAMSIR</creatorcontrib><description>VIBRATORY SENSOR 5 A CAPACITOR COMPRISES A DIELECTRIC BASE LAYER (4A) DEFINED BY TOP, FIRST AND SIDE SURFACES; A PLURALITY OF FIRST DRIVEN ELECTRODE (I 5) HAVING TIPS AND EDGES DEPOSITED ON THE TOP SURFACE OF THE DIELECTRIC BASE LAYER (4A) THAT EACH ARE SPACED APART AT THE EDGES BY A PREDETENNINED GAP; A PLURALITY OF FIRST SENSING ELECTRODE (16) HAVING TIPS AND EDGES THAT EACH OF THE FIRST SENSING ELECTRODE (16) IS DEPOSITED AT EACH OF THE 10 PREDETEN-NINED GAP IN BETWEEN TWO FIRST DRIVEN ELECTRODES (15) WITH A PREDETERMINED DISTANCE IN BETWEEN THE FIRST SENSING (16) AND FIRST DRIVEN ELECTRODES (15); A PLURALITY PAIR OF PROTRUSION (20) EXTENDS UPWARD FROM THE TOP SURFACE OF THE DIELECTRIC BASE LAYER (4A) AT THE TIPS OF THE FIRST DRIVEN ELECTRODES (I 5) AND THE FIRST SENSING ELECTRODES (I 6); A SECOND DRIVEN ELECTRODE (IO) OR A SECOND SENSING ELECTRODE (II) ARE POSITIONED 1 5 OVERHEAD OF EACH FIRST DRIVEN ELECTRODE (15) AND FIRST SENSING ELECTRODE (16) RESPECTIVELY BY ANCHORING ONTO THE CORRESPONDING PAIR OF PROTRUSIONS (20) WITH A VOID LEFT BETWEEN EACH SECOND AND FIRST ELECTRODES.- WHEREBY THE SECOND DRIVEN (10) AND SECOND SENSING (I 1) ELECTRODES VIBRATE UP AND DOWN BY APPLYING A BIAS VOLTAGE ONTO THE FIRST DRIVEN (I 5) AND FIRST SENSING (I 6) ELECTRODES THUS ABLE TO MANIPULATE 20 PENETRATION DEPTH OF QUASI-STATIC ELECTRIC FIELD LINES PRODUCED FROM THE SECOND DRIVEN (I 0) AND SECOND SENSING ELECTRODES (I 1) INTO A MATERIAL UNDER TEST. (MOST ILLUSTRATED BY</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120113&DB=EPODOC&CC=MY&NR=145205A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120113&DB=EPODOC&CC=MY&NR=145205A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AZLAN ZAKARIA</creatorcontrib><creatorcontrib>DZUZLINDAH MUHAMAD ALIAS</creatorcontrib><creatorcontrib>SURAYA SULAIMAN</creatorcontrib><creatorcontrib>AZRIF MANUT</creatorcontrib><creatorcontrib>AGUS SANTOSO TAMSIR</creatorcontrib><title>VIBRATORY SENSOR</title><description>VIBRATORY SENSOR 5 A CAPACITOR COMPRISES A DIELECTRIC BASE LAYER (4A) DEFINED BY TOP, FIRST AND SIDE SURFACES; A PLURALITY OF FIRST DRIVEN ELECTRODE (I 5) HAVING TIPS AND EDGES DEPOSITED ON THE TOP SURFACE OF THE DIELECTRIC BASE LAYER (4A) THAT EACH ARE SPACED APART AT THE EDGES BY A PREDETENNINED GAP; A PLURALITY OF FIRST SENSING ELECTRODE (16) HAVING TIPS AND EDGES THAT EACH OF THE FIRST SENSING ELECTRODE (16) IS DEPOSITED AT EACH OF THE 10 PREDETEN-NINED GAP IN BETWEEN TWO FIRST DRIVEN ELECTRODES (15) WITH A PREDETERMINED DISTANCE IN BETWEEN THE FIRST SENSING (16) AND FIRST DRIVEN ELECTRODES (15); A PLURALITY PAIR OF PROTRUSION (20) EXTENDS UPWARD FROM THE TOP SURFACE OF THE DIELECTRIC BASE LAYER (4A) AT THE TIPS OF THE FIRST DRIVEN ELECTRODES (I 5) AND THE FIRST SENSING ELECTRODES (I 6); A SECOND DRIVEN ELECTRODE (IO) OR A SECOND SENSING ELECTRODE (II) ARE POSITIONED 1 5 OVERHEAD OF EACH FIRST DRIVEN ELECTRODE (15) AND FIRST SENSING ELECTRODE (16) RESPECTIVELY BY ANCHORING ONTO THE CORRESPONDING PAIR OF PROTRUSIONS (20) WITH A VOID LEFT BETWEEN EACH SECOND AND FIRST ELECTRODES.- WHEREBY THE SECOND DRIVEN (10) AND SECOND SENSING (I 1) ELECTRODES VIBRATE UP AND DOWN BY APPLYING A BIAS VOLTAGE ONTO THE FIRST DRIVEN (I 5) AND FIRST SENSING (I 6) ELECTRODES THUS ABLE TO MANIPULATE 20 PENETRATION DEPTH OF QUASI-STATIC ELECTRIC FIELD LINES PRODUCED FROM THE SECOND DRIVEN (I 0) AND SECOND SENSING ELECTRODES (I 1) INTO A MATERIAL UNDER TEST. (MOST ILLUSTRATED BY</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAI83QKcgzxD4pUCHb1C_YP4mFgTUvMKU7lhdLcDHJuriHOHrqpBfnxqcUFicmpeakl8b6RhiamRgamjsYEFQAAc3kcmQ</recordid><startdate>20120113</startdate><enddate>20120113</enddate><creator>AZLAN ZAKARIA</creator><creator>DZUZLINDAH MUHAMAD ALIAS</creator><creator>SURAYA SULAIMAN</creator><creator>AZRIF MANUT</creator><creator>AGUS SANTOSO TAMSIR</creator><scope>EVB</scope></search><sort><creationdate>20120113</creationdate><title>VIBRATORY SENSOR</title><author>AZLAN ZAKARIA ; DZUZLINDAH MUHAMAD ALIAS ; SURAYA SULAIMAN ; AZRIF MANUT ; AGUS SANTOSO TAMSIR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_MY145205A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>AZLAN ZAKARIA</creatorcontrib><creatorcontrib>DZUZLINDAH MUHAMAD ALIAS</creatorcontrib><creatorcontrib>SURAYA SULAIMAN</creatorcontrib><creatorcontrib>AZRIF MANUT</creatorcontrib><creatorcontrib>AGUS SANTOSO TAMSIR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AZLAN ZAKARIA</au><au>DZUZLINDAH MUHAMAD ALIAS</au><au>SURAYA SULAIMAN</au><au>AZRIF MANUT</au><au>AGUS SANTOSO TAMSIR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VIBRATORY SENSOR</title><date>2012-01-13</date><risdate>2012</risdate><abstract>VIBRATORY SENSOR 5 A CAPACITOR COMPRISES A DIELECTRIC BASE LAYER (4A) DEFINED BY TOP, FIRST AND SIDE SURFACES; A PLURALITY OF FIRST DRIVEN ELECTRODE (I 5) HAVING TIPS AND EDGES DEPOSITED ON THE TOP SURFACE OF THE DIELECTRIC BASE LAYER (4A) THAT EACH ARE SPACED APART AT THE EDGES BY A PREDETENNINED GAP; A PLURALITY OF FIRST SENSING ELECTRODE (16) HAVING TIPS AND EDGES THAT EACH OF THE FIRST SENSING ELECTRODE (16) IS DEPOSITED AT EACH OF THE 10 PREDETEN-NINED GAP IN BETWEEN TWO FIRST DRIVEN ELECTRODES (15) WITH A PREDETERMINED DISTANCE IN BETWEEN THE FIRST SENSING (16) AND FIRST DRIVEN ELECTRODES (15); A PLURALITY PAIR OF PROTRUSION (20) EXTENDS UPWARD FROM THE TOP SURFACE OF THE DIELECTRIC BASE LAYER (4A) AT THE TIPS OF THE FIRST DRIVEN ELECTRODES (I 5) AND THE FIRST SENSING ELECTRODES (I 6); A SECOND DRIVEN ELECTRODE (IO) OR A SECOND SENSING ELECTRODE (II) ARE POSITIONED 1 5 OVERHEAD OF EACH FIRST DRIVEN ELECTRODE (15) AND FIRST SENSING ELECTRODE (16) RESPECTIVELY BY ANCHORING ONTO THE CORRESPONDING PAIR OF PROTRUSIONS (20) WITH A VOID LEFT BETWEEN EACH SECOND AND FIRST ELECTRODES.- WHEREBY THE SECOND DRIVEN (10) AND SECOND SENSING (I 1) ELECTRODES VIBRATE UP AND DOWN BY APPLYING A BIAS VOLTAGE ONTO THE FIRST DRIVEN (I 5) AND FIRST SENSING (I 6) ELECTRODES THUS ABLE TO MANIPULATE 20 PENETRATION DEPTH OF QUASI-STATIC ELECTRIC FIELD LINES PRODUCED FROM THE SECOND DRIVEN (I 0) AND SECOND SENSING ELECTRODES (I 1) INTO A MATERIAL UNDER TEST. (MOST ILLUSTRATED BY</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | VIBRATORY SENSOR |
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