METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

WHEN A LASER BEAM IS IRRADIATED ONTO A SEMICONDUCTOR FILM (11); A STEEP TEMPERATURE GRADIENT IS PRODUCED BETWEEN A SUBSTRATE (10) AND THE SEMICONDUCTOR FILM. FOR THIS REASON, THE SEMICONDUCTOR FILM (11) CONTRACTS, SO THAT A WARP IN THE FILM OCCURS. THEREFORE, THE QUALITY OF A RESULTING CRYSTALLINE S...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TAMAE TAKANO, SHUNPEI YAMAZAKI, TORU MITSUKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:WHEN A LASER BEAM IS IRRADIATED ONTO A SEMICONDUCTOR FILM (11); A STEEP TEMPERATURE GRADIENT IS PRODUCED BETWEEN A SUBSTRATE (10) AND THE SEMICONDUCTOR FILM. FOR THIS REASON, THE SEMICONDUCTOR FILM (11) CONTRACTS, SO THAT A WARP IN THE FILM OCCURS. THEREFORE, THE QUALITY OF A RESULTING CRYSTALLINE SEMICONDUCTOR FILM (13) SOMETIMES DETERIORATES.ACCORDING TO THE PRESENT INVENTION, IT IS CHARACTERIZED IN THAT, AFTER LASER BEAM CRYSTALLIZATION ON THE SEMICONDUCTOR FILM (11), HEAT TREATMENT IS CARRIED OUT SO AS TO REDUCE THE WARP IN THE FILM. SINCE THE SUBSTRATE (10) CONTRACTS BY THE HEAT TREATMENT, THE WARP IN THE SEMICONDUCTOR FILM (11) IS LESSENED, SO THAT THE PHYSICAL PROPERTIES OF THE SEMICONDUCTOR FILM (17) CAN BE IMPROVED.(FIG 1D)