LOW DEFECT DENSITY SELF-INTERSTITIAL DOMINATED SILICON

THE PRESENT INVENTION RELATES TO SINGLE CRYSTAL SILICON, IN INGOT (10) OR WAFER FORM, WHICH CONTAINS AN AXIALLY SYMMETRIC REGION (6) WHICH IS FREE OF AGGLOMERATED INTRINSIC POINT DEFECTS,AND A PROCESS FOR THE PREPARATION THEREOF. THE PROCESS FOR GROWING THE SINGLE CRYSTAL SILICON INGOT (10) COMPRISE...

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Bibliographische Detailangaben

Hauptverfasser:	STEVE A. MARKGRAF, BAYARD K. JOHNSON, ROBERT FALSTER, SEAMUS A. MCQUAID, JOSEPH C. HOLZER, PAOLO MUTTI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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