PIEZORESISTIVE PRESSURE SENSORS BASED ON SOI STRUCTURES WITH MICRO-ETCHED DIAPHRAGMS

The present invention refers to a diaphragm performed in materials of the electronic industry and semiconductors industry for being applied in pressure sensors. This diaphragm consists in a membrane that includes two or more layers of different materials on which silicon piezoresistors with electrom...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Héctor BÁEZ MEDINA, Francisco Javier HERNÁNDEZ CUEVAS, Salvador MENDOZA ACEVEDO, Mayahuel ORTEGA AVILÉS, Marco Antonio RAMÍREZ SALINAS, Jacobo Esteban MUNGUÍA CERVANTES, Miguel Ángel ALEMÁN ARCE, Luis Alfonso VILLA VARGAS
Format:	Patent
Sprache:	eng ; spa
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE PHYSICS SEMICONDUCTOR DEVICES TESTING
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