METHOD FOR PREPARING BOTTOM-LAYER-FREE ORIENTED SILICON STEEL AND PRODUCT OBTAINED THEREBY

The present invention belongs to the technical field of the preparation of silicon steels, and particularly relates to a method for preparing a bottom-layer-free oriented silicon steel. During decarburization annealing, the thickness of an oxide film on the surface layer of a strip steel is 1.5-2.5...

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Bibliographische Detailangaben
Hauptverfasser: LIU Zhaoyue, SONG Donghe, GONG Jian, XIAO Huiming, TENG Renhao, HU Zhiyuan, GAO Qian, QI Jiebin, ZHAO Songshan, LI Ruifeng, YOU Xuechang, SUN Maolin, WANG Xianhui, WANG Aixing
Format: Patent
Sprache:eng ; spa
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