DIRECT INJECTION BASED ON MICROCONTROLLERS FOR GAS PHASE DEPOSIT SYSTEMS
The present disclosure is related to a device for the deposit of thin films (
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| creator | Fernando JUÁREZ LÓPEZ Edgar SERRANO PÉREZ |
| description | The present disclosure is related to a device for the deposit of thin films ( |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_MX2016012092A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>MX2016012092A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_MX2016012092A3</originalsourceid><addsrcrecordid>eNrjZPBw8QxydQ5R8PTzAlKe_n4KTo7Bri4KQIavp3OQv7O_X0iQv4-Pa1Cwgpt_kIK7Y7BCgAdQiYKLa4B_sGeIQnBkcIirbzAPA2taYk5xKi-U5mZQcnMNcfbQTS3Ij08tLkhMTs1LLYn3jTAyMDQzMDQysDRyNCZKEQBrwC11</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DIRECT INJECTION BASED ON MICROCONTROLLERS FOR GAS PHASE DEPOSIT SYSTEMS</title><source>esp@cenet</source><creator>Fernando JUÁREZ LÓPEZ ; Edgar SERRANO PÉREZ</creator><creatorcontrib>Fernando JUÁREZ LÓPEZ ; Edgar SERRANO PÉREZ</creatorcontrib><description>The present disclosure is related to a device for the deposit of thin films (<1000 nm thick) using the organic metal vapor chemical deposit technique. For the precursor deliberation, an electronic injection system has been developed, allowing regulating precisely the amount of precursor sent to the reactor chamber. The solution is stored in a device that pressurizes the same to 40PSI at room temperature, allowing isolating the precursor off the environment to avoid the degradation of the same. An auxiliary line has been implemented towards the reactor chamber, allowing the addition of water as an agent that will rapidly break down the precursor, thus reducing the deposit temperature on temperature sensitive substrates, such as the magnesium and aluminum alloys.
La patente engloba un dispositivo para la depositación de películas delgadas (<1000 nm de espesor) utilizando la técnica de depositación química de vapor metal orgánica. Para la deliberación del precursor se ha desarrollado un sistema de inyección electrónica que permite regular de manera precisa la cantidad de precursor enviada a la cámara del reactor. La solución es almacenada en un dispositivo que presuriza la solución a 40PSI a temperatura ambiente y que permite aislar el precursor del medio ambiente para evitar el degradamiento del precursor. Se ha implementado una línea auxiliar hacia la cámara del reactor que permite la adición de agua como un agente que descompone rápidamente el precursor reduciendo así la temperatura de depositación en sustratos sensibles a la temperatura, como lo son las aleaciones de magnesio y aluminio.</description><language>eng ; spa</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180319&DB=EPODOC&CC=MX&NR=2016012092A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180319&DB=EPODOC&CC=MX&NR=2016012092A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Fernando JUÁREZ LÓPEZ</creatorcontrib><creatorcontrib>Edgar SERRANO PÉREZ</creatorcontrib><title>DIRECT INJECTION BASED ON MICROCONTROLLERS FOR GAS PHASE DEPOSIT SYSTEMS</title><description>The present disclosure is related to a device for the deposit of thin films (<1000 nm thick) using the organic metal vapor chemical deposit technique. For the precursor deliberation, an electronic injection system has been developed, allowing regulating precisely the amount of precursor sent to the reactor chamber. The solution is stored in a device that pressurizes the same to 40PSI at room temperature, allowing isolating the precursor off the environment to avoid the degradation of the same. An auxiliary line has been implemented towards the reactor chamber, allowing the addition of water as an agent that will rapidly break down the precursor, thus reducing the deposit temperature on temperature sensitive substrates, such as the magnesium and aluminum alloys.
La patente engloba un dispositivo para la depositación de películas delgadas (<1000 nm de espesor) utilizando la técnica de depositación química de vapor metal orgánica. Para la deliberación del precursor se ha desarrollado un sistema de inyección electrónica que permite regular de manera precisa la cantidad de precursor enviada a la cámara del reactor. La solución es almacenada en un dispositivo que presuriza la solución a 40PSI a temperatura ambiente y que permite aislar el precursor del medio ambiente para evitar el degradamiento del precursor. Se ha implementado una línea auxiliar hacia la cámara del reactor que permite la adición de agua como un agente que descompone rápidamente el precursor reduciendo así la temperatura de depositación en sustratos sensibles a la temperatura, como lo son las aleaciones de magnesio y aluminio.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPBw8QxydQ5R8PTzAlKe_n4KTo7Bri4KQIavp3OQv7O_X0iQv4-Pa1Cwgpt_kIK7Y7BCgAdQiYKLa4B_sGeIQnBkcIirbzAPA2taYk5xKi-U5mZQcnMNcfbQTS3Ij08tLkhMTs1LLYn3jTAyMDQzMDQysDRyNCZKEQBrwC11</recordid><startdate>20180319</startdate><enddate>20180319</enddate><creator>Fernando JUÁREZ LÓPEZ</creator><creator>Edgar SERRANO PÉREZ</creator><scope>EVB</scope></search><sort><creationdate>20180319</creationdate><title>DIRECT INJECTION BASED ON MICROCONTROLLERS FOR GAS PHASE DEPOSIT SYSTEMS</title><author>Fernando JUÁREZ LÓPEZ ; Edgar SERRANO PÉREZ</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_MX2016012092A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; spa</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Fernando JUÁREZ LÓPEZ</creatorcontrib><creatorcontrib>Edgar SERRANO PÉREZ</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fernando JUÁREZ LÓPEZ</au><au>Edgar SERRANO PÉREZ</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DIRECT INJECTION BASED ON MICROCONTROLLERS FOR GAS PHASE DEPOSIT SYSTEMS</title><date>2018-03-19</date><risdate>2018</risdate><abstract>The present disclosure is related to a device for the deposit of thin films (<1000 nm thick) using the organic metal vapor chemical deposit technique. For the precursor deliberation, an electronic injection system has been developed, allowing regulating precisely the amount of precursor sent to the reactor chamber. The solution is stored in a device that pressurizes the same to 40PSI at room temperature, allowing isolating the precursor off the environment to avoid the degradation of the same. An auxiliary line has been implemented towards the reactor chamber, allowing the addition of water as an agent that will rapidly break down the precursor, thus reducing the deposit temperature on temperature sensitive substrates, such as the magnesium and aluminum alloys.
La patente engloba un dispositivo para la depositación de películas delgadas (<1000 nm de espesor) utilizando la técnica de depositación química de vapor metal orgánica. Para la deliberación del precursor se ha desarrollado un sistema de inyección electrónica que permite regular de manera precisa la cantidad de precursor enviada a la cámara del reactor. La solución es almacenada en un dispositivo que presuriza la solución a 40PSI a temperatura ambiente y que permite aislar el precursor del medio ambiente para evitar el degradamiento del precursor. Se ha implementado una línea auxiliar hacia la cámara del reactor que permite la adición de agua como un agente que descompone rápidamente el precursor reduciendo así la temperatura de depositación en sustratos sensibles a la temperatura, como lo son las aleaciones de magnesio y aluminio.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; spa |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | DIRECT INJECTION BASED ON MICROCONTROLLERS FOR GAS PHASE DEPOSIT SYSTEMS |
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