Process for producing p-GaN layers

The invention relates to the semiconductor device manufacturing technology, in particular to processes for producing crystalline layers of III-N compounds with p-type electrical conduction on heterogeneous substrates.The process for producing p-GaN layers comprises the deposition on a heterogeneous...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GORCEAC Leonid, BOTNARIUC Vasile, RAEVSCHI Simion
Format:	Patent
Sprache:	eng ; rum ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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