Thermoelectric microwire in glass insulation

The invention relates to the technology for obtaining microwires in glass insulation with a stable coefficient of electromotive force.The thermoelectric microwire in glass insulation of Bi1-xSbx doped with Te, where x = 0.10...0.15. The concentration of Te is 0.002% at.The result of the invention co...

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Bibliographische Detailangaben
Hauptverfasser:	NIKOLAEVA Albina, KONOPKO Leonid, BODIUL Pavel, BOTNARI Oxana
Format:	Patent
Sprache:	eng ; rum ; rus
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F COMPOUNDS THEREOF CONDUCTORS CRYSTAL GROWTH ELECTRICITY INORGANIC CHEMISTRY INSULATORS MEASURING MEASURING QUANTITY OF HEAT MEASURING TEMPERATURE METALLURGY NON-METALLIC ELEMENTS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL RESISTORS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TESTING THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to the technology for obtaining microwires in glass insulation with a stable coefficient of electromotive force.The thermoelectric microwire in glass insulation of Bi1-xSbx doped with Te, where x = 0.10...0.15. The concentration of Te is 0.002% at.The result of the invention consists in obtaining a microwire with a stable coefficient of electromotive force, in a temperature range of 100...150 K. Invenţia se referă la tehnologia de obţinere a microfirelor în izolaţie de sticlă cu coeficientul forţei electromotoare constant.Microfirul termoelectric în izolaţie de sticlă din Bi1-xSbx dopat cu Te, unde x = 0,10...0,15. Concentraţia de Te este de 0,002 % at.Rezultatul invenţiei constă în obţinerea microfirului cu coeficientul forţei electromotoare constant, într-un interval de temperaturi de 100...150 K. Изобретение относится к технологии получения микропроводов в стеклянной изоляции с устойчивым коэффициентом электродвижущей силы.Термоэлектрический микропроводв стеклянной изоляции из Bi1-xSbx легированным Te, где х = 0,10...0,15. Концентрация Te составляет 0,002 % at.Результат изобретения состоит в получении микропровода с устойчивым коэффициентом электродвижущей силы, в диапазоне температур 100...150 К.