Electrophotographic element with functionally separated semiconductor layers
The invention relates to the electrophotographic elements.An electrophotographic element consists of a metallized dielectric support, an injecting layer and a transporting layer. The injecting layer is made of indium trisulphide with the electron and hole mobility of the charge carriers. The drift m...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; rum ; rus |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | BUZDUGAN Artur HANCEVSCHI Elena IOVU Mihai IOVU Maria |
| description | The invention relates to the electrophotographic elements.An electrophotographic element consists of a metallized dielectric support, an injecting layer and a transporting layer. The injecting layer is made of indium trisulphide with the electron and hole mobility of the charge carriers. The drift mobility of the charge carriers into the electric field, equal to 2×105ŁEŁ5×105V/cm, corresponds to m=A×En, wherein m - is the drift mobility of the charge carriers; E - the electric intensity; A - the constant; n - for the holes is equal to -1Łn |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_MD1381C2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>MD1381C2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_MD1381C23</originalsourceid><addsrcrecordid>eNqFyTEKwkAQRuE0FqIeQdgLWMQ09jHBQjv7MEz-uAuTnWV3guT2WthbvQ_etrp3ArasyavpK1PygR0EM6K5dzDvpiWyBY0ksrqCRJkM41dzYI3jwqbZCa3IZV9tJpKCw6-76th3z_Z2QtIBJREjwobHtW4udXtu_v0Psgc1qQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Electrophotographic element with functionally separated semiconductor layers</title><source>esp@cenet</source><creator>BUZDUGAN Artur ; HANCEVSCHI Elena ; IOVU Mihai ; IOVU Maria</creator><creatorcontrib>BUZDUGAN Artur ; HANCEVSCHI Elena ; IOVU Mihai ; IOVU Maria</creatorcontrib><description>The invention relates to the electrophotographic elements.An electrophotographic element consists of a metallized dielectric support, an injecting layer and a transporting layer. The injecting layer is made of indium trisulphide with the electron and hole mobility of the charge carriers. The drift mobility of the charge carriers into the electric field, equal to 2×105ŁEŁ5×105V/cm, corresponds to m=A×En, wherein m - is the drift mobility of the charge carriers; E - the electric intensity; A - the constant; n - for the holes is equal to -1Łn<0, n - for the electrons is equal to 0<nŁ1. The transporting layer is made of the vitreous arsenic trisulphide.
Invenţia se referă la materialele electrofotografice.Elementul electrofotografic conţine un suport dielectric metalizat, un strat injector şi unul de transport. Stratul injector este confecţionat din trisulfură de indiu cu conductibilitate prin electroni şi goluri. Mobilitatea de derivă a purtătorilor de sarcină în câmpul electric 2?105≤E≤5?105 V/cm este µ=A?En, unde µ este mobilitatea de derivă a purtătorilor de sarcină; E este intensitatea câmpului electric; A este o constantă; n - pentru goluri este -1≤n≤0, iar pentru electroni 0<n≤1. Stratul de transport este confecţionat din trisulfură de arsen vitroasă.
Изобретение относится к электрофотографическим элементам.Электрофотографический элемент состоит из металлизированной диэлектрической подложки, инжекционного слоя и транспортного слоя. Инжекционный слой выполнен из трисульфида индия с электронно-дырочной подвижностью носителей заряда. Дрейфовая подвижность носителей заряда в электрическом поле, равном 2x105ЈЕЈ5x105В/см, соответствует µ=АЅЕn, где µ-дрейфовая подвижность носителей заряда; Е - напряженность электрического поля; А - постоянная; n - для дырок равно -1≤n<0, n - для электронов равно 0<n≤1. Транспортный слой выполнен из стеклообразного трисульфида мышьяка.</description><language>eng ; rum ; rus</language><subject>CINEMATOGRAPHY ; ELECTROGRAPHY ; ELECTROPHOTOGRAPHY ; HOLOGRAPHY ; MAGNETOGRAPHY ; PHOTOGRAPHY ; PHYSICS</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010228&DB=EPODOC&CC=MD&NR=1381C2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010228&DB=EPODOC&CC=MD&NR=1381C2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BUZDUGAN Artur</creatorcontrib><creatorcontrib>HANCEVSCHI Elena</creatorcontrib><creatorcontrib>IOVU Mihai</creatorcontrib><creatorcontrib>IOVU Maria</creatorcontrib><title>Electrophotographic element with functionally separated semiconductor layers</title><description>The invention relates to the electrophotographic elements.An electrophotographic element consists of a metallized dielectric support, an injecting layer and a transporting layer. The injecting layer is made of indium trisulphide with the electron and hole mobility of the charge carriers. The drift mobility of the charge carriers into the electric field, equal to 2×105ŁEŁ5×105V/cm, corresponds to m=A×En, wherein m - is the drift mobility of the charge carriers; E - the electric intensity; A - the constant; n - for the holes is equal to -1Łn<0, n - for the electrons is equal to 0<nŁ1. The transporting layer is made of the vitreous arsenic trisulphide.
Invenţia se referă la materialele electrofotografice.Elementul electrofotografic conţine un suport dielectric metalizat, un strat injector şi unul de transport. Stratul injector este confecţionat din trisulfură de indiu cu conductibilitate prin electroni şi goluri. Mobilitatea de derivă a purtătorilor de sarcină în câmpul electric 2?105≤E≤5?105 V/cm este µ=A?En, unde µ este mobilitatea de derivă a purtătorilor de sarcină; E este intensitatea câmpului electric; A este o constantă; n - pentru goluri este -1≤n≤0, iar pentru electroni 0<n≤1. Stratul de transport este confecţionat din trisulfură de arsen vitroasă.
Изобретение относится к электрофотографическим элементам.Электрофотографический элемент состоит из металлизированной диэлектрической подложки, инжекционного слоя и транспортного слоя. Инжекционный слой выполнен из трисульфида индия с электронно-дырочной подвижностью носителей заряда. Дрейфовая подвижность носителей заряда в электрическом поле, равном 2x105ЈЕЈ5x105В/см, соответствует µ=АЅЕn, где µ-дрейфовая подвижность носителей заряда; Е - напряженность электрического поля; А - постоянная; n - для дырок равно -1≤n<0, n - для электронов равно 0<n≤1. Транспортный слой выполнен из стеклообразного трисульфида мышьяка.</description><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>ELECTROPHOTOGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MAGNETOGRAPHY</subject><subject>PHOTOGRAPHY</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFyTEKwkAQRuE0FqIeQdgLWMQ09jHBQjv7MEz-uAuTnWV3guT2WthbvQ_etrp3ArasyavpK1PygR0EM6K5dzDvpiWyBY0ksrqCRJkM41dzYI3jwqbZCa3IZV9tJpKCw6-76th3z_Z2QtIBJREjwobHtW4udXtu_v0Psgc1qQ</recordid><startdate>20010228</startdate><enddate>20010228</enddate><creator>BUZDUGAN Artur</creator><creator>HANCEVSCHI Elena</creator><creator>IOVU Mihai</creator><creator>IOVU Maria</creator><scope>EVB</scope></search><sort><creationdate>20010228</creationdate><title>Electrophotographic element with functionally separated semiconductor layers</title><author>BUZDUGAN Artur ; HANCEVSCHI Elena ; IOVU Mihai ; IOVU Maria</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_MD1381C23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; rum ; rus</language><creationdate>2001</creationdate><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>ELECTROPHOTOGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MAGNETOGRAPHY</topic><topic>PHOTOGRAPHY</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>BUZDUGAN Artur</creatorcontrib><creatorcontrib>HANCEVSCHI Elena</creatorcontrib><creatorcontrib>IOVU Mihai</creatorcontrib><creatorcontrib>IOVU Maria</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BUZDUGAN Artur</au><au>HANCEVSCHI Elena</au><au>IOVU Mihai</au><au>IOVU Maria</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Electrophotographic element with functionally separated semiconductor layers</title><date>2001-02-28</date><risdate>2001</risdate><abstract>The invention relates to the electrophotographic elements.An electrophotographic element consists of a metallized dielectric support, an injecting layer and a transporting layer. The injecting layer is made of indium trisulphide with the electron and hole mobility of the charge carriers. The drift mobility of the charge carriers into the electric field, equal to 2×105ŁEŁ5×105V/cm, corresponds to m=A×En, wherein m - is the drift mobility of the charge carriers; E - the electric intensity; A - the constant; n - for the holes is equal to -1Łn<0, n - for the electrons is equal to 0<nŁ1. The transporting layer is made of the vitreous arsenic trisulphide.
Invenţia se referă la materialele electrofotografice.Elementul electrofotografic conţine un suport dielectric metalizat, un strat injector şi unul de transport. Stratul injector este confecţionat din trisulfură de indiu cu conductibilitate prin electroni şi goluri. Mobilitatea de derivă a purtătorilor de sarcină în câmpul electric 2?105≤E≤5?105 V/cm este µ=A?En, unde µ este mobilitatea de derivă a purtătorilor de sarcină; E este intensitatea câmpului electric; A este o constantă; n - pentru goluri este -1≤n≤0, iar pentru electroni 0<n≤1. Stratul de transport este confecţionat din trisulfură de arsen vitroasă.
Изобретение относится к электрофотографическим элементам.Электрофотографический элемент состоит из металлизированной диэлектрической подложки, инжекционного слоя и транспортного слоя. Инжекционный слой выполнен из трисульфида индия с электронно-дырочной подвижностью носителей заряда. Дрейфовая подвижность носителей заряда в электрическом поле, равном 2x105ЈЕЈ5x105В/см, соответствует µ=АЅЕn, где µ-дрейфовая подвижность носителей заряда; Е - напряженность электрического поля; А - постоянная; n - для дырок равно -1≤n<0, n - для электронов равно 0<n≤1. Транспортный слой выполнен из стеклообразного трисульфида мышьяка.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; rum ; rus |
| recordid | cdi_epo_espacenet_MD1381C2 |
| source | esp@cenet |
| subjects | CINEMATOGRAPHY ELECTROGRAPHY ELECTROPHOTOGRAPHY HOLOGRAPHY MAGNETOGRAPHY PHOTOGRAPHY PHYSICS |
| title | Electrophotographic element with functionally separated semiconductor layers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T03%3A35%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BUZDUGAN%20Artur&rft.date=2001-02-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EMD1381C2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |