SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE EMPLOYING MOSFETS

A semiconductor integrated circuit device which enables the relaxation of deterioration in reliability due to the hot electron effect and a further promotion of high integration density is disclosed. For this purpose, a MOSFET having a drain region consisting of a low concentration impurity diffused...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KOSHIMARU, SHIGERU
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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