APPARATUS FOR FINISHING PATTERNS
An apparatus for finishing patterns, for example, masks for chip manufacture is provided with an ion source the ion beam current strength of which can be adjusted at a comparatively low value for removing material therewith, for restoring opaque defects, and at a comparatively high current value for...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SLINGERLAND, HENDRIK N |
| description | An apparatus for finishing patterns, for example, masks for chip manufacture is provided with an ion source the ion beam current strength of which can be adjusted at a comparatively low value for removing material therewith, for restoring opaque defects, and at a comparatively high current value for the deposition of material from the ion beam as such, for restoring clear defects. Particles which are not desired for the working can be removed from the ion beam by means of a particle discriminator. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR950001721BB1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR950001721BB1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR950001721BB13</originalsourceid><addsrcrecordid>eNrjZFBwDAhwDHIMCQ1WcPMPUnDz9PMM9vD0c1cIcAwJcQ3yC-ZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQZamBgYGhuZGhk5OhsbEqQIAjvIjBQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS FOR FINISHING PATTERNS</title><source>esp@cenet</source><creator>SLINGERLAND, HENDRIK N</creator><creatorcontrib>SLINGERLAND, HENDRIK N</creatorcontrib><description>An apparatus for finishing patterns, for example, masks for chip manufacture is provided with an ion source the ion beam current strength of which can be adjusted at a comparatively low value for removing material therewith, for restoring opaque defects, and at a comparatively high current value for the deposition of material from the ion beam as such, for restoring clear defects. Particles which are not desired for the working can be removed from the ion beam by means of a particle discriminator.</description><edition>6</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950228&DB=EPODOC&CC=KR&NR=950001721B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19950228&DB=EPODOC&CC=KR&NR=950001721B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SLINGERLAND, HENDRIK N</creatorcontrib><title>APPARATUS FOR FINISHING PATTERNS</title><description>An apparatus for finishing patterns, for example, masks for chip manufacture is provided with an ion source the ion beam current strength of which can be adjusted at a comparatively low value for removing material therewith, for restoring opaque defects, and at a comparatively high current value for the deposition of material from the ion beam as such, for restoring clear defects. Particles which are not desired for the working can be removed from the ion beam by means of a particle discriminator.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBwDAhwDHIMCQ1WcPMPUnDz9PMM9vD0c1cIcAwJcQ3yC-ZhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQZamBgYGhuZGhk5OhsbEqQIAjvIjBQ</recordid><startdate>19950228</startdate><enddate>19950228</enddate><creator>SLINGERLAND, HENDRIK N</creator><scope>EVB</scope></search><sort><creationdate>19950228</creationdate><title>APPARATUS FOR FINISHING PATTERNS</title><author>SLINGERLAND, HENDRIK N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR950001721BB13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1995</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SLINGERLAND, HENDRIK N</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SLINGERLAND, HENDRIK N</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR FINISHING PATTERNS</title><date>1995-02-28</date><risdate>1995</risdate><abstract>An apparatus for finishing patterns, for example, masks for chip manufacture is provided with an ion source the ion beam current strength of which can be adjusted at a comparatively low value for removing material therewith, for restoring opaque defects, and at a comparatively high current value for the deposition of material from the ion beam as such, for restoring clear defects. Particles which are not desired for the working can be removed from the ion beam by means of a particle discriminator.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_KR950001721BB1 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | APPARATUS FOR FINISHING PATTERNS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T09%3A46%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SLINGERLAND,%20HENDRIK%20N&rft.date=1995-02-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR950001721BB1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |