COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME
The compound semiconductor device comprises a first semiconductor layer to be a sub-collector region of a hetero junction bipolar transistor and substrate of a laser diode, a second semiconductor layer to be a collector region formed on first semiconductor layer, a third semiconductor layer to be a...
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| creator | KIM, JONG - RYOL |
| description | The compound semiconductor device comprises a first semiconductor layer to be a sub-collector region of a hetero junction bipolar transistor and substrate of a laser diode, a second semiconductor layer to be a collector region formed on first semiconductor layer, a third semiconductor layer to be a base region formed on the second layer, a fourth semiconductor layer to be an emitter region formed on the third layer, a fifth semiconductor layer to be a cap layer formed on the fourth layer, a T-shaped emitter electrode formed on the fifth layer, a second semiconductor layer to be a clad layer formed on the first layer, a sixth semiconductor layer to be an active layer formed on the second layer, a seventh semiconductor layer to be a clad layer formed on the sixth layer, a eighth semiconductor layer to be a cap layer formed on the seventh layer, an electrode in contact with a predetermined portion of the eighth layer, high resistance region overlapped with second semiconductor layer, and a common electrode on an exposed region between the hetero junction bipolar transistor and laser diode. |
| format | Patent |
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| language | eng ; kor |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME |
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