COMPOUND SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

A compound semiconductor device is manufactured by coating 1st, 2nd, 3rd, 4th and 5th semiconductor layers in orders, etching 2nd, 3rd, 4th, 5th layers except a part, reetching 1st layer of the partially etched-area, forming 6th, 7th, 8th, 9th semiconductor layers, making T-type emitter electrode (E...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KIM, JONG - RYOL
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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