SEMICONDUCTOR MEMORY DEVICE

In this invention, in a sensing circuit of a dynamic memory, barrier transistors are provided between the bit lines and the sensing amplifier. A circuit is provided that, on sensing and on data transfer, changes the gate potential of the barrier transistors so that during the sensing operation the b...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OSIMA SIGEO, TODA HARKI, SAHARA HIROSI
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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