OXYGEN-DOPED AMORPHOUS CARBON FILM AND METHOD OF DEPOSITING THE SAME
본 발명의 일실시예에 따른 산소 도핑 비정질 탄소막 증착 방법은 (a) 공정 챔버 내에 기판을 로딩하는 단계; (b) 상기 공정 챔버 내부를 진공화하는 단계; 및(c) 상기 공정 챔버 내에서 탄화수소 가스를 플라즈마화하여 상기 기판 상에 비정질 탄소막을 증착하는 단계;를 포함하고, 상기 (c) 단계에서 상기 탄화수소 가스와 함께 산소 소스를 플라즈마화하여 증착되는 비정질 탄소막에 산소가 도핑되도록 하는 것을 특징으로 한다. Disclosed is a method for depositing an amorphous carbon film...
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| creator | SEUNG HWAN JEON SEONG PYO CHO NAM SEO KIM |
| description | 본 발명의 일실시예에 따른 산소 도핑 비정질 탄소막 증착 방법은 (a) 공정 챔버 내에 기판을 로딩하는 단계; (b) 상기 공정 챔버 내부를 진공화하는 단계; 및(c) 상기 공정 챔버 내에서 탄화수소 가스를 플라즈마화하여 상기 기판 상에 비정질 탄소막을 증착하는 단계;를 포함하고, 상기 (c) 단계에서 상기 탄화수소 가스와 함께 산소 소스를 플라즈마화하여 증착되는 비정질 탄소막에 산소가 도핑되도록 하는 것을 특징으로 한다.
Disclosed is a method for depositing an amorphous carbon film, the method including: (a) loading a substrate into a process chamber; (b) vacuumizing an inner space of the process chamber; and (c) converting hydrocarbon gas into plasma in the process chamber to deposit an amorphous carbon film on the substrate, wherein in the step (c), an oxygen-containing source is converted into plasma to dope oxygen into the deposited amorphous carbon film. |
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Disclosed is a method for depositing an amorphous carbon film, the method including: (a) loading a substrate into a process chamber; (b) vacuumizing an inner space of the process chamber; and (c) converting hydrocarbon gas into plasma in the process chamber to deposit an amorphous carbon film on the substrate, wherein in the step (c), an oxygen-containing source is converted into plasma to dope oxygen into the deposited amorphous carbon film.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240812&DB=EPODOC&CC=KR&NR=20240122222A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240812&DB=EPODOC&CC=KR&NR=20240122222A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SEUNG HWAN JEON</creatorcontrib><creatorcontrib>SEONG PYO CHO</creatorcontrib><creatorcontrib>NAM SEO KIM</creatorcontrib><title>OXYGEN-DOPED AMORPHOUS CARBON FILM AND METHOD OF DEPOSITING THE SAME</title><description>본 발명의 일실시예에 따른 산소 도핑 비정질 탄소막 증착 방법은 (a) 공정 챔버 내에 기판을 로딩하는 단계; (b) 상기 공정 챔버 내부를 진공화하는 단계; 및(c) 상기 공정 챔버 내에서 탄화수소 가스를 플라즈마화하여 상기 기판 상에 비정질 탄소막을 증착하는 단계;를 포함하고, 상기 (c) 단계에서 상기 탄화수소 가스와 함께 산소 소스를 플라즈마화하여 증착되는 비정질 탄소막에 산소가 도핑되도록 하는 것을 특징으로 한다.
Disclosed is a method for depositing an amorphous carbon film, the method including: (a) loading a substrate into a process chamber; (b) vacuumizing an inner space of the process chamber; and (c) converting hydrocarbon gas into plasma in the process chamber to deposit an amorphous carbon film on the substrate, wherein in the step (c), an oxygen-containing source is converted into plasma to dope oxygen into the deposited amorphous carbon film.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDxj4h0d_XTdfEPcHVRcPT1Dwrw8A8NVnB2DHLy91Nw8_TxVXD0c1HwdQ3x8HdR8HdTcHEN8A_2DPH0c1cI8XBVCHb0deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGRiYGhkYg4GhMnCoA6losQQ</recordid><startdate>20240812</startdate><enddate>20240812</enddate><creator>SEUNG HWAN JEON</creator><creator>SEONG PYO CHO</creator><creator>NAM SEO KIM</creator><scope>EVB</scope></search><sort><creationdate>20240812</creationdate><title>OXYGEN-DOPED AMORPHOUS CARBON FILM AND METHOD OF DEPOSITING THE SAME</title><author>SEUNG HWAN JEON ; SEONG PYO CHO ; NAM SEO KIM</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20240122222A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SEUNG HWAN JEON</creatorcontrib><creatorcontrib>SEONG PYO CHO</creatorcontrib><creatorcontrib>NAM SEO KIM</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SEUNG HWAN JEON</au><au>SEONG PYO CHO</au><au>NAM SEO KIM</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>OXYGEN-DOPED AMORPHOUS CARBON FILM AND METHOD OF DEPOSITING THE SAME</title><date>2024-08-12</date><risdate>2024</risdate><abstract>본 발명의 일실시예에 따른 산소 도핑 비정질 탄소막 증착 방법은 (a) 공정 챔버 내에 기판을 로딩하는 단계; (b) 상기 공정 챔버 내부를 진공화하는 단계; 및(c) 상기 공정 챔버 내에서 탄화수소 가스를 플라즈마화하여 상기 기판 상에 비정질 탄소막을 증착하는 단계;를 포함하고, 상기 (c) 단계에서 상기 탄화수소 가스와 함께 산소 소스를 플라즈마화하여 증착되는 비정질 탄소막에 산소가 도핑되도록 하는 것을 특징으로 한다.
Disclosed is a method for depositing an amorphous carbon film, the method including: (a) loading a substrate into a process chamber; (b) vacuumizing an inner space of the process chamber; and (c) converting hydrocarbon gas into plasma in the process chamber to deposit an amorphous carbon film on the substrate, wherein in the step (c), an oxygen-containing source is converted into plasma to dope oxygen into the deposited amorphous carbon film.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | OXYGEN-DOPED AMORPHOUS CARBON FILM AND METHOD OF DEPOSITING THE SAME |
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