알콕시실란 및 이로부터 제조된 조밀한 유기실리카 막
개선된 기계적 특성을 갖는 조밀한 유기규소 막을 제조하는 방법은, 반응 챔버 내에 기판을 제공하는 단계; 알콕시실란을 포함하는 가스상 조성물을 반응 챔버 내로 도입하는 단계; 및 반응 챔버에서 알콕시실란을 포함하는 가스상 조성물에 에너지를 인가하여 알콕시실란을 포함하는 가스상 조성물의 반응을 유도함으로써 기판 상에 유기규소 막을 증착시키는 단계를 포함하고, 유기규소 막은 ~ 2.40 내지 ~ 3.20의 유전 상수, ~ 6 내지 ~ 30 GPa의 탄성 계수, 및 XPS에 의해 측정될 때 ~ 10 내지 ~ 45 원자%의 탄소를 갖는다....
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| creator | MACDONALD MATTHEW R LEI XINJIAN FOODY MICHAEL JAMES |
| description | 개선된 기계적 특성을 갖는 조밀한 유기규소 막을 제조하는 방법은, 반응 챔버 내에 기판을 제공하는 단계; 알콕시실란을 포함하는 가스상 조성물을 반응 챔버 내로 도입하는 단계; 및 반응 챔버에서 알콕시실란을 포함하는 가스상 조성물에 에너지를 인가하여 알콕시실란을 포함하는 가스상 조성물의 반응을 유도함으로써 기판 상에 유기규소 막을 증착시키는 단계를 포함하고, 유기규소 막은 ~ 2.40 내지 ~ 3.20의 유전 상수, ~ 6 내지 ~ 30 GPa의 탄성 계수, 및 XPS에 의해 측정될 때 ~ 10 내지 ~ 45 원자%의 탄소를 갖는다.
A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxy silane; and applying energy to the gaseous composition comprising alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.40 to ˜3.20, an elastic modulus of from ˜6 to ˜30 GPa, and an at. % carbon of from ˜10 to ˜45 as measured by XPS. |
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A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxy silane; and applying energy to the gaseous composition comprising alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.40 to ˜3.20, an elastic modulus of from ˜6 to ˜30 GPa, and an at. % carbon of from ˜10 to ˜45 as measured by XPS.</description><language>kor</language><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240621&DB=EPODOC&CC=KR&NR=20240090404A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240621&DB=EPODOC&CC=KR&NR=20240090404A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MACDONALD MATTHEW R</creatorcontrib><creatorcontrib>LEI XINJIAN</creatorcontrib><creatorcontrib>FOODY MICHAEL JAMES</creatorcontrib><title>알콕시실란 및 이로부터 제조된 조밀한 유기실리카 막</title><description>개선된 기계적 특성을 갖는 조밀한 유기규소 막을 제조하는 방법은, 반응 챔버 내에 기판을 제공하는 단계; 알콕시실란을 포함하는 가스상 조성물을 반응 챔버 내로 도입하는 단계; 및 반응 챔버에서 알콕시실란을 포함하는 가스상 조성물에 에너지를 인가하여 알콕시실란을 포함하는 가스상 조성물의 반응을 유도함으로써 기판 상에 유기규소 막을 증착시키는 단계를 포함하고, 유기규소 막은 ~ 2.40 내지 ~ 3.20의 유전 상수, ~ 6 내지 ~ 30 GPa의 탄성 계수, 및 XPS에 의해 측정될 때 ~ 10 내지 ~ 45 원자%의 탄소를 갖는다.
A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxy silane; and applying energy to the gaseous composition comprising alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.40 to ˜3.20, an elastic modulus of from ˜6 to ˜30 GPa, and an at. % carbon of from ˜10 to ˜45 as measured by XPS.</description><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB4M7Xnzd6pb7rnvOle8npeg8LrDf0Kb-Zueb1wzuttDW9bNii8WTDnzcINryfMUQBRGxreTgWy5ix4tWMDSMeyNW92blF4vbyTh4E1LTGnOJUXSnMzKLu5hjh76KYW5MenFhckJqfmpZbEewcZGRiZGBhYGpgYmDgaE6cKABiWSkg</recordid><startdate>20240621</startdate><enddate>20240621</enddate><creator>MACDONALD MATTHEW R</creator><creator>LEI XINJIAN</creator><creator>FOODY MICHAEL JAMES</creator><scope>EVB</scope></search><sort><creationdate>20240621</creationdate><title>알콕시실란 및 이로부터 제조된 조밀한 유기실리카 막</title><author>MACDONALD MATTHEW R ; LEI XINJIAN ; FOODY MICHAEL JAMES</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20240090404A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>kor</language><creationdate>2024</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>MACDONALD MATTHEW R</creatorcontrib><creatorcontrib>LEI XINJIAN</creatorcontrib><creatorcontrib>FOODY MICHAEL JAMES</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MACDONALD MATTHEW R</au><au>LEI XINJIAN</au><au>FOODY MICHAEL JAMES</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>알콕시실란 및 이로부터 제조된 조밀한 유기실리카 막</title><date>2024-06-21</date><risdate>2024</risdate><abstract>개선된 기계적 특성을 갖는 조밀한 유기규소 막을 제조하는 방법은, 반응 챔버 내에 기판을 제공하는 단계; 알콕시실란을 포함하는 가스상 조성물을 반응 챔버 내로 도입하는 단계; 및 반응 챔버에서 알콕시실란을 포함하는 가스상 조성물에 에너지를 인가하여 알콕시실란을 포함하는 가스상 조성물의 반응을 유도함으로써 기판 상에 유기규소 막을 증착시키는 단계를 포함하고, 유기규소 막은 ~ 2.40 내지 ~ 3.20의 유전 상수, ~ 6 내지 ~ 30 GPa의 탄성 계수, 및 XPS에 의해 측정될 때 ~ 10 내지 ~ 45 원자%의 탄소를 갖는다.
A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxy silane; and applying energy to the gaseous composition comprising alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.40 to ˜3.20, an elastic modulus of from ˜6 to ˜30 GPa, and an at. % carbon of from ˜10 to ˜45 as measured by XPS.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | 알콕시실란 및 이로부터 제조된 조밀한 유기실리카 막 |
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