GAS INJECTOR

본 발명은 가스 인젝터와 이를 포함하는 반도체 처리 장치에 관한 것이다. 현재 설명되는 가스 인젝터의 실시예는 반도체 처리 장치의 프로세스 챔버에 프로세스 가스를 주입하기 위한 인젝터 튜브를 포함한다. 가스 인젝터는 인젝터 튜브를 냉각시키도록 구성 및 배치된 냉각 유체 도관을 더 포함한다. A gas injector and a semiconductor processing apparatus comprising the gas injector is disclosed. Embodiments of the presently described...

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Hauptverfasser: RADKO BANKRAS, BERT JONGBLOED, BART LINDEBOOM, THEODORUS G.M. OOSTERLAKEN
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Sprache:eng ; kor
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creator RADKO BANKRAS
BERT JONGBLOED
BART LINDEBOOM
THEODORUS G.M. OOSTERLAKEN
description 본 발명은 가스 인젝터와 이를 포함하는 반도체 처리 장치에 관한 것이다. 현재 설명되는 가스 인젝터의 실시예는 반도체 처리 장치의 프로세스 챔버에 프로세스 가스를 주입하기 위한 인젝터 튜브를 포함한다. 가스 인젝터는 인젝터 튜브를 냉각시키도록 구성 및 배치된 냉각 유체 도관을 더 포함한다. A gas injector and a semiconductor processing apparatus comprising the gas injector is disclosed. Embodiments of the presently described gas injector comprise an injector tube to inject a process gas to a process chamber of the semiconductor processing apparatus. The gas injector further comprises a cooling fluid conduit constructed and arranged to cool the injector tube.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20240074669A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20240074669A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20240074669A3</originalsourceid><addsrcrecordid>eNrjZOBxdwxW8PTzcnUO8Q_iYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBkYmBgbmJmZmlo7GxKkCAPgDHTg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GAS INJECTOR</title><source>esp@cenet</source><creator>RADKO BANKRAS ; BERT JONGBLOED ; BART LINDEBOOM ; THEODORUS G.M. OOSTERLAKEN</creator><creatorcontrib>RADKO BANKRAS ; BERT JONGBLOED ; BART LINDEBOOM ; THEODORUS G.M. OOSTERLAKEN</creatorcontrib><description>본 발명은 가스 인젝터와 이를 포함하는 반도체 처리 장치에 관한 것이다. 현재 설명되는 가스 인젝터의 실시예는 반도체 처리 장치의 프로세스 챔버에 프로세스 가스를 주입하기 위한 인젝터 튜브를 포함한다. 가스 인젝터는 인젝터 튜브를 냉각시키도록 구성 및 배치된 냉각 유체 도관을 더 포함한다. A gas injector and a semiconductor processing apparatus comprising the gas injector is disclosed. Embodiments of the presently described gas injector comprise an injector tube to inject a process gas to a process chamber of the semiconductor processing apparatus. The gas injector further comprises a cooling fluid conduit constructed and arranged to cool the injector tube.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240528&amp;DB=EPODOC&amp;CC=KR&amp;NR=20240074669A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20240528&amp;DB=EPODOC&amp;CC=KR&amp;NR=20240074669A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RADKO BANKRAS</creatorcontrib><creatorcontrib>BERT JONGBLOED</creatorcontrib><creatorcontrib>BART LINDEBOOM</creatorcontrib><creatorcontrib>THEODORUS G.M. OOSTERLAKEN</creatorcontrib><title>GAS INJECTOR</title><description>본 발명은 가스 인젝터와 이를 포함하는 반도체 처리 장치에 관한 것이다. 현재 설명되는 가스 인젝터의 실시예는 반도체 처리 장치의 프로세스 챔버에 프로세스 가스를 주입하기 위한 인젝터 튜브를 포함한다. 가스 인젝터는 인젝터 튜브를 냉각시키도록 구성 및 배치된 냉각 유체 도관을 더 포함한다. A gas injector and a semiconductor processing apparatus comprising the gas injector is disclosed. Embodiments of the presently described gas injector comprise an injector tube to inject a process gas to a process chamber of the semiconductor processing apparatus. The gas injector further comprises a cooling fluid conduit constructed and arranged to cool the injector tube.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOBxdwxW8PTzcnUO8Q_iYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBkYmBgbmJmZmlo7GxKkCAPgDHTg</recordid><startdate>20240528</startdate><enddate>20240528</enddate><creator>RADKO BANKRAS</creator><creator>BERT JONGBLOED</creator><creator>BART LINDEBOOM</creator><creator>THEODORUS G.M. OOSTERLAKEN</creator><scope>EVB</scope></search><sort><creationdate>20240528</creationdate><title>GAS INJECTOR</title><author>RADKO BANKRAS ; BERT JONGBLOED ; BART LINDEBOOM ; THEODORUS G.M. OOSTERLAKEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20240074669A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>RADKO BANKRAS</creatorcontrib><creatorcontrib>BERT JONGBLOED</creatorcontrib><creatorcontrib>BART LINDEBOOM</creatorcontrib><creatorcontrib>THEODORUS G.M. OOSTERLAKEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RADKO BANKRAS</au><au>BERT JONGBLOED</au><au>BART LINDEBOOM</au><au>THEODORUS G.M. OOSTERLAKEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GAS INJECTOR</title><date>2024-05-28</date><risdate>2024</risdate><abstract>본 발명은 가스 인젝터와 이를 포함하는 반도체 처리 장치에 관한 것이다. 현재 설명되는 가스 인젝터의 실시예는 반도체 처리 장치의 프로세스 챔버에 프로세스 가스를 주입하기 위한 인젝터 튜브를 포함한다. 가스 인젝터는 인젝터 튜브를 냉각시키도록 구성 및 배치된 냉각 유체 도관을 더 포함한다. A gas injector and a semiconductor processing apparatus comprising the gas injector is disclosed. Embodiments of the presently described gas injector comprise an injector tube to inject a process gas to a process chamber of the semiconductor processing apparatus. The gas injector further comprises a cooling fluid conduit constructed and arranged to cool the injector tube.</abstract><oa>free_for_read</oa></addata></record>
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language eng ; kor
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title GAS INJECTOR
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