COMPOSITION FOR THE SELECTIVE ETCHING OF SILICON OXYNITRIDE FILM
본 발명은 실리콘 산화질화막, 산화막, 질화막을 식각함에 있어서, 실리콘 질화막 대비 실리콘 산화질화막을 선택적으로 제거하기 위한 식각 조성물에 관한 것이다. 본 발명에 따르면, 실리콘 산화막에 대한 일정한 식각속도를 가지면서, 동시에 실리콘 질화막 대비 실리콘 산화질화막 식각속도를 향상시킬 수 있다. 또한, 식각 조성물의 안정성을 향상시킬 수 있다....
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| creator | JEONG SIK OH KEONYOUNG KIM MYUNGHO LEE YOUNGMEE KANG HAK SOO KIM GI YOUNG KIM YUJIN HEO MYUNG GEUN SONG |
| description | 본 발명은 실리콘 산화질화막, 산화막, 질화막을 식각함에 있어서, 실리콘 질화막 대비 실리콘 산화질화막을 선택적으로 제거하기 위한 식각 조성물에 관한 것이다. 본 발명에 따르면, 실리콘 산화막에 대한 일정한 식각속도를 가지면서, 동시에 실리콘 질화막 대비 실리콘 산화질화막 식각속도를 향상시킬 수 있다. 또한, 식각 조성물의 안정성을 향상시킬 수 있다. |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES |
| title | COMPOSITION FOR THE SELECTIVE ETCHING OF SILICON OXYNITRIDE FILM |
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