APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER
단일 처리 챔버 내에서 탄소계 및 수소계 오염물을 반도체 기판으로부터 제거하는 시스템과 방법이 개시된다. 본 발명은 단일 처리 챔버 내에서 처리를 수행하기 위하여, 원격 플라즈마 유닛과 복수의 가스 공급원들의 이용을 포함할 수 있다. A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | GAO PEIPEI WANG FEI TOLLE JOHN HILL ERIC JOTHEESWARAN BUBESH BABU LIN XING RAMANATHAN VISH |
| description | 단일 처리 챔버 내에서 탄소계 및 수소계 오염물을 반도체 기판으로부터 제거하는 시스템과 방법이 개시된다. 본 발명은 단일 처리 챔버 내에서 처리를 수행하기 위하여, 원격 플라즈마 유닛과 복수의 가스 공급원들의 이용을 포함할 수 있다.
A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20240035416A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20240035416A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20240035416A3</originalsourceid><addsrcrecordid>eNqNissKwjAQAHvxIOo_LHgWaqvet-nGBpts2aTirRSJp6KF-v_4wA_wNAwz82TApkHB0HpAV4KlUHEJmgWELJ-xBtbAF1PStyuUgh1oYQuerFHsylaF965NbT0YBwjeuGNN0Agr8h8BVaEtSJbJ7NYPU1z9uEjWmoKqNnF8dHEa-2u8x2d3kizNdmma73fbA-b_XS-OdjcU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER</title><source>esp@cenet</source><creator>GAO PEIPEI ; WANG FEI ; TOLLE JOHN ; HILL ERIC ; JOTHEESWARAN BUBESH BABU ; LIN XING ; RAMANATHAN VISH</creator><creatorcontrib>GAO PEIPEI ; WANG FEI ; TOLLE JOHN ; HILL ERIC ; JOTHEESWARAN BUBESH BABU ; LIN XING ; RAMANATHAN VISH</creatorcontrib><description>단일 처리 챔버 내에서 탄소계 및 수소계 오염물을 반도체 기판으로부터 제거하는 시스템과 방법이 개시된다. 본 발명은 단일 처리 챔버 내에서 처리를 수행하기 위하여, 원격 플라즈마 유닛과 복수의 가스 공급원들의 이용을 포함할 수 있다.
A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240315&DB=EPODOC&CC=KR&NR=20240035416A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240315&DB=EPODOC&CC=KR&NR=20240035416A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GAO PEIPEI</creatorcontrib><creatorcontrib>WANG FEI</creatorcontrib><creatorcontrib>TOLLE JOHN</creatorcontrib><creatorcontrib>HILL ERIC</creatorcontrib><creatorcontrib>JOTHEESWARAN BUBESH BABU</creatorcontrib><creatorcontrib>LIN XING</creatorcontrib><creatorcontrib>RAMANATHAN VISH</creatorcontrib><title>APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER</title><description>단일 처리 챔버 내에서 탄소계 및 수소계 오염물을 반도체 기판으로부터 제거하는 시스템과 방법이 개시된다. 본 발명은 단일 처리 챔버 내에서 처리를 수행하기 위하여, 원격 플라즈마 유닛과 복수의 가스 공급원들의 이용을 포함할 수 있다.
A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNissKwjAQAHvxIOo_LHgWaqvet-nGBpts2aTirRSJp6KF-v_4wA_wNAwz82TApkHB0HpAV4KlUHEJmgWELJ-xBtbAF1PStyuUgh1oYQuerFHsylaF965NbT0YBwjeuGNN0Agr8h8BVaEtSJbJ7NYPU1z9uEjWmoKqNnF8dHEa-2u8x2d3kizNdmma73fbA-b_XS-OdjcU</recordid><startdate>20240315</startdate><enddate>20240315</enddate><creator>GAO PEIPEI</creator><creator>WANG FEI</creator><creator>TOLLE JOHN</creator><creator>HILL ERIC</creator><creator>JOTHEESWARAN BUBESH BABU</creator><creator>LIN XING</creator><creator>RAMANATHAN VISH</creator><scope>EVB</scope></search><sort><creationdate>20240315</creationdate><title>APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER</title><author>GAO PEIPEI ; WANG FEI ; TOLLE JOHN ; HILL ERIC ; JOTHEESWARAN BUBESH BABU ; LIN XING ; RAMANATHAN VISH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20240035416A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GAO PEIPEI</creatorcontrib><creatorcontrib>WANG FEI</creatorcontrib><creatorcontrib>TOLLE JOHN</creatorcontrib><creatorcontrib>HILL ERIC</creatorcontrib><creatorcontrib>JOTHEESWARAN BUBESH BABU</creatorcontrib><creatorcontrib>LIN XING</creatorcontrib><creatorcontrib>RAMANATHAN VISH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GAO PEIPEI</au><au>WANG FEI</au><au>TOLLE JOHN</au><au>HILL ERIC</au><au>JOTHEESWARAN BUBESH BABU</au><au>LIN XING</au><au>RAMANATHAN VISH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER</title><date>2024-03-15</date><risdate>2024</risdate><abstract>단일 처리 챔버 내에서 탄소계 및 수소계 오염물을 반도체 기판으로부터 제거하는 시스템과 방법이 개시된다. 본 발명은 단일 처리 챔버 내에서 처리를 수행하기 위하여, 원격 플라즈마 유닛과 복수의 가스 공급원들의 이용을 포함할 수 있다.
A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR20240035416A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T10%3A37%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GAO%20PEIPEI&rft.date=2024-03-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20240035416A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |